.SUBCKT FDB390N15A 2 1 3 ****************************************************************** ** Fairchild Discrete Modeling Group ** ****************************************************************** ** Website www.fairchildsemi.com\models ** ****************************************************************** ** (C) Copyright 2009 Fairchild Semiconductor Corporation ** ** All rights reserved ** ** ** ** FDB390N15A Spice model ** ** Revision RevA, 30 May 2011 ** ****************************************************************** *Nom Temp 25 deg C Dbody 7 5 DbodyMOD Dbreak 5 11 DbreakMOD Lgate 1 9 5.827e-9 Ldrain 2 5 0.1e-9 Lsource 3 7 2.596e-9 RLgate 1 9 58.27 RLdrain 2 5 1 RLsource 3 7 25.96 Rgate 9 6 1.41 * Shielded Gate D1 100 5 D_SG_cap D2 100 101 D_SG_cap R1 101 7 0.876 C1 6 101 96e-12 .MODEL D_SG_cap D (IS=1e-9 n=1 RS=4e-3 CJO=1.325e-9 M=0.705 t_abs=25) It 7 17 1 Ebreak 11 7 17 7 159 Rbreak 17 7 RbreakMOD 1 .MODEL RbreakMOD RES (TC1=0.75e-3 TC2=-0.7e-6) .MODEL DbodyMOD D (IS=0.73e-12 n=1 RS=4.0e-3 TRS1=2.5e-3 TRS2=1e-6 + CJO=0.341e-9 M=0.565 TT=1e-9 XTI=2.75) .MODEL DbreakMOD D (RS=8e-3 TRS1=1e-3 TRS2=1e-6 ) Rsource 7a 7 0.939e-3 Rdrain 5 16 RdrainMOD 28e-3 .MODEL RdrainMOD RES (TC1=8.5e-3 TC2=25e-6) M_BSIM3 16 6 7a 7a Bsim3 W=2.2 L=1.1e-6 NRS=0 NRD=0 .MODEL Bsim3 NMOS (LEVEL=7 VERSION=3.1 MOBMOD=3 CAPMOD=2 paramchk=1 NQSMOD=0 *Process Parameters + TOX=1000e-10 ;Oxide thickness + XJ=0.54e-6 ;Channel depth + NCH=0.8e17 ;Channel concentration *Channel Current + U0=720 VSAT=500000 DROUT=1.8 + DELTA=0.2 PSCBE2=0 RSH=0.939e-3 *Threshold voltage + VTH0=3.65 *Sub-threshold characteristics + VOFF=-0.14 NFACTOR=1.4 *Junction diodes and Capacitance + LINT=0.19e-6 DLC=0.19e-6 + CGSO=176e-12 CGSL=0 CGDO=1e-12 CGDL=115e-12 + CJ=0 CF=0 CKAPPA=0.9 * Temperature parameters + KT1=-2.0 KT2=0 UA1=6e-9 + NJ=10) .ENDS