* PSpice Model Editor - Version 16.0.0 *$ .SUBCKT FDB3860 2 1 3 ****************************************************************** ** Fairchild Discrete Modeling Group ** ****************************************************************** ** Website www.fairchildsemi.com\models ** ** Scott Pearson scott.pearson@fairchildsemi.com ** ** Sylvie Tran sylvie.tran@fairchildsemi.com ** ****************************************************************** ** (C) Copyright 2008 Fairchild Semiconductor Corporation ** ** All rights reserved ** ** ** ** FDB3860 Spice model ** ** Revision RevA, 13 Feb 2009 (ST) ** ****************************************************************** *Nom Temp 25 deg C Dbody 7 5 DbodyMOD Dbreak 5 11 DbreakMOD Lgate 1 9 5.278e-9 Ldrain 2 5 0.1e-9 Lsource 3 7 1.469e-9 RLgate 1 9 52.78 RLdrain 2 5 1 RLsource 3 7 14.69 Rgate 9 6 1.7 It 7 17 1 Ebreak 11 7 17 7 110 Rbreak 17 7 RbreakMOD 1 .MODEL RbreakMOD RES (TC1=1e-3 TC2=-1e-6) .MODEL DbodyMOD D (IS=1.7e-12 n=1 RS=3.3e-3 TRS1=2.6e-3 TRS2=1e-6 + CJO=.72e-9 M=0.48 TT=0.1e-9 XTI=3) .MODEL DbreakMOD D (RS=100e-3 TRS1=1e-3 TRS2=1e-6 ) Rsource 7a 7 1.272e-3 Rdrain 5 16 RdrainMOD 24.95e-3 .MODEL RdrainMOD RES (TC1=9e-3 TC2=8e-6) M_BSIM3 16 6 7a 7a Bsim3 W=2.86 L=1.55e-6 NRS=0 NRD=0 .MODEL Bsim3 NMOS (LEVEL=7 VERSION=3.1 MOBMOD=3 CAPMOD=2 paramchk=1 NQSMOD=0 *Process Parameters + TOX=1060e-10 ;Oxide thickness + XJ=1e-6 ;Channel depth + NCH=1.4e17 ;Channel concentration *Channel Current + U0=700 VSAT=1e5 DROUT=1.8 + DELTA=0.13 PSCBE2=0.00001 RSH=1.272e-3 *Threshold voltage + VTH0=3.8 *Sub-threshold characteristics + VOFF=-0.1 NFACTOR=1 *Junction diodes and Capacitance + LINT=0.25e-6 DLC=0.25e-6 + CGSO=43e-12 CGSL=103e-12 CGDO=2.5e-12 CGDL=120e-12 + CJ=0 CF=0 CKAPPA=1.6 * Temperature parameters + KT1=-2.05 KT2=0 UA1=1.1e-9 + NJ=10) .ENDS *$