.SUBCKT FDB120N10 2 1 3 ****************************************************************** ** Fairchild Discrete Modeling Group ** ****************************************************************** ** Website www.fairchildsemi.com\models ** ** Scott Pearson scott.pearson@fairchildsemi.com ** ** Sylvie Tran sylvie.tran@fairchildsemi.com ** ****************************************************************** ** (C) Copyright 2008 Fairchild Semiconductor Corporation ** ** All rights reserved ** ** ** ** FDB120N10 Spice model ** ** Revision RevA, 4 Mar 2009 (ST) ** ****************************************************************** *Nom Temp 25 deg C Dbody 7 5 DbodyMOD Dbreak 5 11 DbreakMOD Lgate 1 9 7.23e-9 Ldrain 2 5 1.44e-9 Lsource 3 7 2.1e-9 RLgate 1 9 72.3 RLdrain 2 5 14.4 RLsource 3 7 21 Rgate 9 6 2.05 It 7 17 1 Ebreak 11 7 17 7 110 Rbreak 17 7 RbreakMOD 1 .MODEL RbreakMOD RES (TC1=1e-3 TC2=-1e-6) .MODEL DbodyMOD D (IS=22.5e-12 n=1 RS=2.012e-3 TRS1=1.5e-3 TRS2=1-6 + CJO=1.8307e-9 M=0.6 TT=0.1e-9 XTI=-1) .MODEL DbreakMOD D (RS=30e-3 TRS1=1e-3 TRS2=1e-6) Rsource 7a 7 0.328e-3 Rdrain 5 16 RdrainMOD 7.95e-3 .MODEL RdrainMOD RES (TC1=7e-3 TC2=5e-6) M_BSIM3 16 6 7a 7a Bsim3 W=9 L=1.55e-6 NRS=0 NRD=0 .MODEL Bsim3 NMOS (LEVEL=7 VERSION=3.1 MOBMOD=3 CAPMOD=2 paramchk=1 NQSMOD=0) *Process Parameters + TOX=1060e-10 ;Oxide thickness + XJ=1e-6 ;Channel depth + NCH=1.4e17 ;Channel concentration *Channel Current + U0=700 VSAT=100000 DROUT=1.8 + DELTA=0.15 PSCBE2=0.00001 RSH=0.328e-3 *Threshold voltage + VTH0=3.58 *Sub-threshold characteristics + VOFF=-0.1 NFACTOR=1 *Junction diodes and Capacitance + LINT=0.25e-6 DLC=0.25e-6 + CGSO=75e-12 CGSL=102e-12 CGDO=5.5e-12 CGDL=112e-12 + CJ=0 CF=0 CKAPPA=1.6 * Temperature parameters + KT1=-1.95 KT2=0 UA1=0.01e-9 + NJ=10) .ENDS