.SUBCKT FDB031N08 2 1 3 ****************************************************************** ** Fairchild Discrete Modeling Group ** ****************************************************************** ** Website www.fairchildsemi.com\models ** ** Scott Pearson scott.pearson@fairchildsemi.com ** ** Sylvie Tran sylvie.tran@fairchildsemi.com ** ****************************************************************** ** (C) Copyright 2008 Fairchild Semiconductor Corporation ** ** All rights reserved ** ** ** ** FDB031N08 Spice model ** ** Revision RevA, 19 Jan 2009 ** ****************************************************************** *Nom Temp 25 deg C Dbody 7 5 DbodyMOD Dbreak 5 11 DbreakMOD Lgate 1 9 5.954e-9 Ldrain 2 5 1.44e-9 Lsource 3 7 2.009e-9 RLgate 1 9 59.54 RLdrain 2 5 14.4 RLsource 3 7 20.09 Rgate 9 6 0.75 It 7 17 1 Ebreak 11 7 17 7 82 Rbreak 17 7 RbreakMOD 1 .MODEL RbreakMOD RES (TC1=1.25e-3 TC2=-1e-6) .MODEL DbodyMOD D (IS=10e-12 n=1 RS=1.019e-3 TRS1=3.0e-3 TRS2=1e-6 + CJO=3.7e-9 M=0.45 TT=1e-9 XTI=3) .MODEL DbreakMOD D (RS=30e-3 TRS1=1e-3 TRS2=1e-6 ) Rsource 7a 7 0.401e-3 Rdrain 5 16 RdrainMOD 1.67e-3 .MODEL RdrainMOD RES (TC1=7.2e-3 TC2=1.4e-5) M_BSIM3 16 6 7a 7a Bsim3 W=25.335 L=1.58e-6 NRS=0 NRD=0 .MODEL Bsim3 NMOS (LEVEL=7 VERSION=3.1 MOBMOD=3 CAPMOD=2 paramchk=1 NQSMOD=0 *Process Parameters + TOX=1000e-10 ;Oxide thickness + XJ=1e-6 ;Channel depth + NCH=1.4e17 ;Channel concentration *Channel Current + U0=700 VSAT=500000 DROUT=1.8 + DELTA=0.2 PSCBE2=0.00001 RSH=0.401e-3 *Threshold voltage + VTH0=3.78 *Sub-threshold characteristics + VOFF=-0.1 NFACTOR=1 *Junction diodes and Capacitance + LINT=0.255e-6 DLC=0.255e-6 + CGSO=75e-12 CGSL=0e-12 CGDO=5.9e-12 CGDL=124.6e-12 + CJ=0 CF=0 CKAPPA=1.5 * Temperature parameters + KT1=-2.2 KT2=0 UA1=0.8e-9 + NJ=10) .ENDS