*$ **************** Power Discrete MOSFET Electrical Circuit Model ***************** ** Product Name: FDB0300N1007L ** 100V N-Channel MOSFET and D2-PAK(TO263) ** Model Type: BSIM3V3 **------------------------------------------------------------------------------- .SUBCKT FDB0300N1007L 2 1 3 *Nom Temp=25 deg C Dbody 7 5 DbodyMOD Dbreak 5 11 DbreakMOD Ebreak 11 7 17 7 110 Lgate 1 9 1.183e-9 Ldrain 2 5 1.440e-9 Lsource 3 7 9.664e-10 RLgate 1 9 11.83 RLdrain 2 5 14.4 RLsource 3 7 9.66 Rgate 9 6 0.5 It 7 17 1 Rbreak 17 7 RbreakMOD 1 .MODEL RbreakMOD RES (TC1=9.18e-4 TC2=-1.13e-6) .MODEL DbodyMOD D (IS=2.15e-11 N=1.0 RS=7.52e-4 TRS1=1.85e-3 TRS2=1.82e-7 + CJO=4.84e-9 M=0.33 VJ=0.48 TT=1.24e-7 XTI=3 EG=1.14) .MODEL DbreakMOD D (RS=100e-3 TRS1=1.0e-3 TRS2=1e-6) Rdrain 5 16 RdrainMOD 0.0034 .MODEL RdrainMOD RES (TC1=6.22e-3 TC2=1.01e-6) M_BSIM3 16 6 7 7 Bsim3 W=15.65 L=2.0e-6 NRS=1 .MODEL Bsim3 NMOS (LEVEL=7 VERSION=3.1 MOBMOD=3 CAPMOD=2 PARAMCHK=1 NQSMOD=0 + TOX=1000e-10 XJ=1.4e-6 NCH=1.3e17 + U0=700 VSAT=1.0e5 DROUT=1.0 + DELTA=0.1 PSCBE2=0 RSH=2.09e-5 + VTH0=2.88 VOFF=-0.1 NFACTOR=1.1 + LINT=4.72e-7 DLC=4.72e-7 FC=0.5 + CGSO=1.00e-15 CGSL=0 CGDO=2.05e-13 + CGDL=1.36e-10 CJ=0 CF=0 + CKAPPA=0.2 KT1=-1.45 KT2=0 + UA1=1.08e-10 NJ=10) .ENDS ********************* Power Discrete MOSFET Thermal Model ********************** ** Package: D2-PAK(TO263) **------------------------------------------------------------------------------ .SUBCKT FDB0300N1007L_Thermal TH TL CTHERM1 TH 6 1.01e-4 CTHERM2 6 5 3.20e-3 CTHERM3 5 4 1.10e-2 CTHERM4 4 3 4.30e-2 CTHERM5 3 2 6.00e-2 CTHERM6 2 TL 1.20e-1 RTHERM1 TH 6 4.00e-4 RTHERM2 6 5 6.00e-3 RTHERM3 5 4 3.00e-2 RTHERM4 4 3 5.60e-2 RTHERM5 3 2 7.60e-2 RTHERM6 2 TL 4.32e-1 .ENDS FDB0300N1007L_Thermal **------------------------------------------------------------------------------ ** Creation: Jun.-27-2016 Rev.: 0.0 ** Fairchild Semiconductor