*$
**************** Power Discrete MOSFET Electrical Circuit Model *****************
** Product Name: FDA69N25
** 250V N-Channel MOSFET
** Model Type: BSIM3V3
**-------------------------------------------------------------------------------
.SUBCKT FDA69N25 2 1 3    
*Nom Temp=25 deg C
Dbody 7 5    DbodyMOD
Dbreak 5 11  DbreakMOD
Ebreak 11 7 17 7 255
Lgate 1 9    2.34e-9
Ldrain 2 5   1.65e-9
Lsource 3 7  1.65e-9
RLgate 1 9   23.4
RLdrain 2 5  16.5
RLsource 3 7 16.5
Rgate 9 6    0.5
It 7 17      1
Rbreak 17 7  RbreakMOD 1
.MODEL RbreakMOD RES (TC1=1.18e-3 TC2=-1.85e-6)
.MODEL DbodyMOD D (IS=3.55e-12  N=1   RS=3.52e-3   TRS1=3.5e-3  TRS2=1e-6 
+ CJO=6.48e-9   M=0.56     VJ=0.44    TT=2.25e-7   XTI=3        EG=1.16)
.MODEL DbreakMOD D (RS=100e-3 TRS1=1e-3 TRS2=1e-6)
Rdrain 5 16 RdrainMOD 0.029
.MODEL RdrainMOD RES (TC1=9.83e-3 TC2=2.55e-5)
M_BSIM3 16 6 7 7 Bsim3 W=11.25 L=2.0u NRS=1
.MODEL Bsim3 NMOS (LEVEL=7 VERSION=3.1 MOBMOD=3 CAPMOD=2 PARAMCHK=1 NQSMOD=0
+ TOX=1100e-10   XJ=1.4e-6     NCH=1.23e17
+ U0=700         VSAT=1.0e5    DROUT=1.0
+ DELTA=0.10     PSCBE2=0      RSH=5.04e-3
+ VTH0=4.70      VOFF=-0.1     NFACTOR=1.1
+ LINT=4.58e-7   DLC=4.58e-7   FC=0.5
+ CGSO=1.0e-15   CGSL=0        CGDO=1.4e-12
+ CGDL=2.88e-10  CJ=0          CF=0
+ CKAPPA=0.05    KT1=-1.84     KT2=0
+ UA1=1.38e-8    NJ=10)
.ENDS
*$
******************** Power Discrete MOSFET Thermal Model ***********************
** Package: TO-3P-3L
**-------------------------------------------------------------------------------
.SUBCKT FDA69N25_THERMAL TH TL
CTHERM1 TH 6 6.54e-3
CTHERM2 6 5  1.08e-2
CTHERM3 5 4  6.64e-2
CTHERM4 4 3  9.92e-2
CTHERM5 3 2  4.62e-1
CTHERM6 2 TL 5.82e-1
RTHERM1 TH 6 1.40e-3
RTHERM2 6 5  5.00e-3
RTHERM3 5 4  1.40e-2
RTHERM4 4 3  3.60e-2
RTHERM5 3 2  8.40e-2
RTHERM6 2 TL 1.20e-1
.ENDS FDA69N25_THERMAL
**-----------------------------------------------------------------------------
** Creation: Jan.-22-2025   Rev.:1.0
** onsemi
*$