**************** Power Discrete MOSFET Electrical Circuit Model **************** * Product Name: FCPF11N60 * 600V N-Channel MOSFET and TO-220F *------------------------------------------------------------------------------- .SUBCKT FCPF11N60 20 10 30 Rg 10 1 1.58 M1 2 1 3 3 DMOS L=1u W=1u .MODEL DMOS NMOS(VTO={4.88*{-0.00066*TEMP+1.0165}} KP={{0.00011*TEMP}+9.7} + THETA=0.0416 VMAX=1.0E5 LEVEL=3) Cgs 1 3 880p Rd 20 4 0.12 TC=0.0105 Dds 3 4 DDS .MODEL DDS D(BV={600*{0.001*TEMP+0.975}} M=0.42 CJO=788p VJ=0.48) Dbody 3 20 DBODY .MODEL DBODY D(IS=2.0E-12 N=1.00 RS=0.018 EG=1.12 TT=200n) Ra 4 2 0.12 TC=0.0105 Rs 3 5 0.0012 Ls 5 30 2.0n M2 1 8 6 6 INTER E2 8 6 4 1 2 .MODEL INTER NMOS (VTO=0 KP=10 LEVEL=1) Cgdmax 7 4 1248p Rcgd 7 4 1E7 Dgd 6 4 DGD Rdgd 4 6 1E7 .MODEL DGD D(M=0.54 CJO=1248p VJ=0.21) M3 7 9 1 1 INTER E3 9 1 4 1 -2 .ENDS *------------------------------------------------------------------------------ ******************** Power Discrete MOSFET Thermal Model ********************** .SUBCKT FCPF11N60_Thermal TH TL CTHERM1 TH 6 2.04e-4 CTHERM2 6 5 2.28e-2 CTHERM3 5 4 2.34e-2 CTHERM4 4 3 3.62e-2 CTHERM5 3 2 4.62e-1 CTHERM6 2 TL 5.62e-1 RTHERM1 TH 6 1.32e-2 RTHERM2 6 5 2.78e-2 RTHERM3 5 4 4.82e-2 RTHERM4 4 3 7.38e-1 RTHERM5 3 2 8.04e-1 RTHERM6 2 TL 1.864 .ENDS *------------------------------------------------------------------------------ * Creation : May-31-2005 rev:1.0 * Fairchild Semiconductor