.SUBCKT esdr0502n 1 2 3 4 5 6
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* Model Generated by ON Discrete Eval Lab *
*    Copyright(c) ON Semiconductor        *
*         All Rights Reserved             *
*      UNPUBLISHED LICENSED SOFTWARE      *
*     Contains Proprietary Information    *
*                                         *
*   Commercial Use or Resale Restricted   *
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* Model generated on 11/18/2013
* MODEL FORMAT: PSpice
* Pin 1 = GND
* Pin 2 = NC
* Pin 3 = NC
* Pin 4 = D-
* Pin 5 = D+
* Pin 6 = VBUS
*
*
D1	10	1	esdr0502n_diode
D2	10	4	esdr0502n_diode 
D3	10	5	esdr0502n_diode 
D4	1	7	esdr0502n_diode 
D5	4	8	esdr0502n_diode 
D6	5	9	esdr0502n_diode 
R1	2	10	1e9
R2	3	10	1e9
X1	10	7	esdr0502tvs
X2	10	8	esdr0502tvs
X3	10	9	esdr0502tvs
X4	10	6	esdr0502tvs
*
.ENDS esdr0502n
*
.MODEL esdr0502n_diode d
+IS=1e-15 RS=0.01 N=0.957115 EG=1.3
+XTI=4 BV=350 IBV=0.00025 CJO=.3e-12
+VJ=0.980233 M=0.39895 FC=0.5 TT=1e-09
+KF=0 AF=1
*
.SUBCKT esdr0502tvs 7 1
*     anode cathode
*node: 7      1
*    Forward Section
D1 2 1 MDD1
.MODEL MDD1 D IS=3.71652e-15 N=1 XTI=1 RS=0.2
+ CJO=4e-11 TT=2e-09
*    Leakage Current
R 1 2 MDR 5.5e+09
.MODEL MDR RES TC1=-0.0679198 TC2=0.00155388
*    Breakdown
RZ 2 3 23.9989 
D3 4 3 MDD3
.MODEL MDD3 D IS=2.5e-15 N=0.5 
EV1 1 4 6 8 1
IBV 0 6 0.001
RBV 6 0 MDRBV 7900
.MODEL MDRBV RES TC1=0
D4 8 0 MDD3
L 7 2 1e-15
IT 0 8 0.001
.ENDS esdr0502tvs