*BD244A/B/C PNP EPITAXIAL SILICON TRANSISTOR

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* Medium Power Linear and Switching Applications

* Complement to BD243, BD243A, BD243B and BD243C Respectively

* Vcbo & Vceo: BD244(-45V), BD244A(-60V), BD244B(-80V), BD244C(-100V)

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* MODEL PARAMETERS FROM MEASURED DATA: BD244B

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.MODEL BD244 PNP( 

+ LEVEL = 1

+ IS    = 1.09078E-12

+ NF    = 1.00172

+ ISE   = 2.51189E-12

+ NE    = 1.5

+ BF    = 240.3

+ IKF   = 1.1124198

+ VAF   = 153.184

+ NR    = 0.9935

+ ISC   = 9.14539E-13

+ NC    = 1.21111

+ BR    = 20.265

+ IKR   = 0.524807

+ VAR   = 36.6808

+ RB    = 49.2185

+ IRB   = 5.84552E-05

+ RBM   = 0.727994

+ RE    = 0.0379141

+ RC    = 1.0135

+ XTB   = 1.3913

+ EG    = 1.2342

+ XTI   = 3

+ CJE   = 4.484304E-10

+ VJE   = 0.5862666

+ MJE   = 0.3243386

+ CJC   = 2.066303E-10

+ VJC   = 0.4538756

+ MJC   = 0.3323408

+ XCJC  = 0.6935

+ FC    = 0.5  )

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* FAIRCHILD   CASE: TO-220   PID: BD244B

* NOV-24-2000 CREATION