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**** Power Discrete Bipolar Transistor Electrical Parameters ****
**---------------------------------------------------------------
** General Purpose Transistor PNP Silicon
** Product: BC857BTT1G
**---------------------------------------------------------------
.MODEL BC857BTT1G pnp
+ IS=5.20452e-14   BF=150.517       NF=1.0           VAF=200
+ IKF=0.025        ISE=2.09532e-11  NE=2.0           BR=10.5
+ NR=1.5           VAR=200          IKR=0.78557      ISC=3.07206e-13
+ NC=1             RB=10.746        IRB=1e-6         RBM=0.102
+ RE=0.015         RC=1.5522        XTB=1.45         XTI=3
+ EG=1.1           CJE=1.13e-11     VJE=0.70         MJE=0.225
+ TF=6.508e-10     CJC=9.24e-12     VJC=0.58         MJC=0.425
+ FC=0.5           TR=1e-08 
**--------------------------------------------------------------
** Creation: May-09-2022 Rev.: 1.0
** onsem
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