* BC549/550 NPN EPITAXIAL SILICON TRANSISTOR ELECTRICAL PARAMETERS

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* Switching and Amplifier

* Vcbo & Vceo: BC549(Vcbo:30V / Vceo:30V)

*              BC550(Vcbo:50V / Vceo:45V)

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* MODEL PARAMETERS FROM MEASURED DATA: BC549

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.MODEL  BC549/550 NPN

+ LEVEL = 1

+ IS    = 2.24183E-14

+ NF    = 0.996496

+ ISE   = 1.90217E-14

+ NE    = 2

+ BF    = 228.4

+ IKF   = 0.211766

+ VAF   = 161.939

+ NR    = 0.993

+ ISC   = 4.7863E-15

+ NC    = 0.996 

+ BR    = 12.1807

+ IKR   = 0.3423

+ VAR   = 123.229

+ RB    = 167.033

+ IRB   = 7.079458E-05

+ RBM   = 1.12256

+ RE    = 0.036

+ RC    = 0.79

+ XTB   = 1.65

+ EG    = 1.1737

+ XTI   = 3

+ CJE   = 1.87E-11

+ VJE   = 0.732

+ MJE   = 0.33

+ CJC   = 6.16E-12

+ VJC   = 0.395

+ MJC   = 0.251

+ XCJC  = 0.6192

+ FC    = 0.5 

+ TF    = 518.15E-12

+ XTF   = 10

+ VTF   = 10

+ ITF   = 1

+ TR    = 10.000E-9

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* FAIRCHILD       CASE: TO-92        PID: BC549/550

* APR-12-2001 CREATION