* 2N6520 PNP EPITAXIAL SILICON TRANSISTOR ELECTRICAL PARAMETERS

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* Vcbo & Vceo: 2N6520(-350V)

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* MODEL PARAMETERS FROM MEASURED DATA: 2N6520

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.MODEL  2N6520 PNP 

+ LEVEL = 1

+ IS    = 3.47028E-14

+ NF    = 1.00016

+ ISE   = 1.20226E-12

+ NE    = 2.0

+ BF    = 94.6

+ IKF   = 0.0217059

+ VAF   = 261.13

+ NR    = 0.98

+ ISC   = 2.13183E-16

+ NC    = 0.8

+ BR    = 13.1682

+ IKR   = 0.18198

+ VAR   = 21.58

+ RB    = 101.58

+ IRB   = 1.122018E-06

+ RBM   = 2.44747

+ RE    = 0.175571

+ RC    = 4.71677

+ XTB   = 1.7438

+ EG    = 1.196

+ XTI   = 3

+ CJE   = 5.98E-11

+ VJE   = 0.589

+ MJE   = 0.39

+ CJC   = 1.48E-11

+ VJC   = 0.519

+ MJC   = 0.41

+ XCJC  = 0.648953642

+ FC    = 0.5

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* FAIRCHILD CASE: TO-92   PID: 2N6520

* FEB-28-2001 CREATION