NCP51810GAN1GEVB: 100V eGaN Half Bridge Gate Driver Evaluation Board

The NCP51810 high-speed gate driver is designed to meet the stringent requirements of driving enhancement mode (e-mode) GaN HEMT power switches in half-bridge power topologies. The NCP51810 offers short and matched propagation delays as well as -3.5 V to +150 V (typical) common mode voltage range for the high-side drive. To fully protect the gate of the GaN power transistor against excessive voltage stress, both drive stages employ a dedicated voltage regulator to accurately maintain the gate-source drive signal amplitude. The NCP51810 offers important protection functions such as independent under-voltage lockout (UVLO) and IC thermal shutdown.
Evaluation/Development Tool Information
Product Status Compliance Short Description Parts Used Action
NCP51810GAN1GEVB Active
100V eGaN Half Bridge Gate Driver Evaluation Board NCP51810AMNTWG
Technical Documents
Type Document Title Document ID/Size Rev
Eval Board: BOM NCP51810GAN1GEVB Bill of Materials (ROHS Compliant) NCP51810GAN1GEVB_BOM_ROHS - 30 KB  1 
Eval Board: Gerber NCP51810GAN1GEVB Gerber Layout Files (Zip Format) NCP51810GAN1GEVB_GERBER - 291 KB  0 
Eval Board: Schematic NCP51810GAN1GEVB Schematic NCP51810GAN1GEVB_SCHEMATIC - 978 KB  0 
Eval Board: Manual NCP51810 HB GaN Driver Evaluation Board User's Manual EVBUM2762/D - 3638 KB  0 
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