Power MOSFET, N-Channel, B-FET, 450 V, 0.5 A, 4.25 Ω, TO-92

Last Shipments

Overview

These N-Channel enhancement mode power field effect transistors are produced using onsemi’s proprietary, planar, DMOS technology. This advanced technology has been especially tailored to minimize on-state resistance, provide superior switching performance, and withstand high energy pulse in the avalanche and commutation mode. These devices are well suited for electronic ballasts based on half bridge configuration.

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  • 0.5A, 450V, RDS(on) = 4.25Ω @ VGS = 10 V
  • Low Gate Charge (typical 6.5 nC)
  • Low Crss (typical 6.5 pF)
  • 100% Avalanche Tested
  • Improved dv/dt Capability
  • Gate-Source Voltage ± 50V Guaranteed

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Product

Status

CAD Models

Compliance

Package Type

Case Outline

MSL Type

MSL Temp (°C)

Container Type

Container Qty.

ON Target

Channel Polarity

Silicon Family

Package Name

Type

Gate Level

Wide SOA Mosfets

Configuration

OPN in older Technology

V(BR)DSS Min (V)

RDS(on) Max @ VGS = 10 V (mΩ)

VGS Max (V)

Vgs(th) Max (V)

ID Max (A)

PD Max (W)

RDS(on) Max @ VGS = 2.5 V (mΩ)

RDS(on) Max @ VGS = 4.5 V (mΩ)

Qg Typ @ VGS = 4.5 V (nC)

Qg Typ @ VGS = 10 V (nC)

Ciss Typ (pF)

Qgd Typ @ VGS = 4.5 V (nC)

Qrr Typ (nC)

Coss Typ (pF)

Crss Typ (pF)

Reference Price

SSN1N45BTA

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Last Shipments

CAD Model

Pb

A

H

P

TO−92 3LD 4.75x4.80

NA

0

FNFLD

2000

N

N-Channel

PowerTrench® T1

TO-92-3

High Voltage

Standard

0

Single

0

450

4250

±50

-

0.5

0.9

-

23.6

23.6

6.5

185

3.2

260

29

6.5

Price N/A

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