High Voltage MOSFETs | NVB082N65S3F

Single N-Channel Power MOSFET SUPERFET® III, FRFET®, 650 V , 40 A, 82 mΩ, D2PAK

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Overview

SUPERFET III MOSFET is onsemi’s brand−new high voltage super−junction (SJ) MOSFET family that is utilizing charge balance technology for outstanding low on−resistance and lower gate charge performance. This advanced technology is tailored to minimize conduction loss, provide superior switching performance, and withstand extreme dv/dt rate. Consequently, SUPERFET III MOSFET is very suitable for the various power systems for miniaturization and higher efficiency. SUPERFET III FRFET MOSFET’s optimized reverse recovery performance of body diode can remove additional component and improve system reliability

  • HV DC/DC converter
  • OBC

  • On Board Charger
  • DC/DC Converter

  • Low RDS (ON)
  • Low QG and Capacitance
  • AEC−Q101 Qualified and PPAP Capable
  • RoHS Compliant

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RDS(on) Max @ VGS = 10 V (mΩ)

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RDS(on) Max @ VGS = 2.5 V (mΩ)

RDS(on) Max @ VGS = 4.5 V (mΩ)

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NVB082N65S3F

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CAD Model

Pb

A

H

P

D2PAK-3 / TO-263-2

418AJ

1

245

REEL

800

Y

N-Channel

PowerTrench® T1

D2PAK-3

High Voltage

Standard

0

Single

0

650

82

±30

5

40

313

~NA~

~NA~

~NA~

81

3410

~NA~

410

70

~NA~

$4.0894

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Reliability Data

Die Related Summary Data

Device: NVB082N65S3F

Equivalent to wafer fab process: HVFET

Product Technology

Product Technology

Equivalent Device-Hours

MTBF/MTTF in Hours

FITS

HVFET

21

40576236131

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Re-calculate Data

Data is based on the following assumptions.

Note: The temperature and confidence level may be adjusted to your requirements.

Disclaimer: A reliability FIT rate calculated using this tool shall not be used for any functional safety purpose. In case a raw FIT rate needs to be estimated for a component which is targeted to be used in a safety critical application (i.e. compliant to ISO 26262 standard) it should be calculated according to generic safety standards (IEC62380, IEC61709, SN29500, FIDES, etc.)

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