NUS5530MN

Integrated Power MOSFET with PNP Low V_CE(sat) Switching Transistor

Overview

This integrated device represents a new level of safety and board-space reduction by combining the 20 V P-Channel with a PNP Silicon Low V_CE(sat) switching transistor. This newly integrated product provides higher efficiency and accuracy for battery powered portable electronics.

Applications

Power Management in Portable and Battery-Powered Products

End Products

Cellular and Cordless Telephones
PCMCIA Cards

Features

Low R_DS(on) (MOSFET) and Low V_CE(sat) (Transistor)
Higher Efficiency Extending Battery Life
Logic Level Gate Drive (MOSFET)
Performance DFN Package

Material Composition

Product Change Notification

Product List

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Product

Status

CAD Models

Compliance

Package Type

Case Outline

MSL Type

MSL Temp (°C)

Container Type

Container Qty.

Polarity

Type

V_CE(sat) Max (V)

I_C Cont. (A)

V_CEO Min (V)

V_CBO (V)

V_EBO (V)

V_BE(sat) (V)

V_BE(on) (V)

h_FE Min

h_FE Max

f_T Min (MHz)

P_TM Max (W)

Reference Price

NUS5530MNR2G

Active

DFN-8

506AL

260

REEL

3000

PNP

Low V_CE(sat)

0.1

0.85

0.875

100

400

100

2.75

$0.6547

Product Number:

Distributor		Stock	BUY

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General Purpose and Low VCE(sat) Transistors | NUS5530MN

Integrated Power MOSFET with PNP Low VCE(sat) Switching Transistor

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Integrated Power MOSFET with PNP Low V_CE(sat) Switching Transistor