Integrated Power MOSFET with PNP Low VCE(sat) Switching Transistor

Lifetime

Overview

This integrated device represents a new level of safety and board-space reduction by combining the 20 V P-Channel with a PNP Silicon Low VCE(sat) switching transistor. This newly integrated product provides higher efficiency and accuracy for battery powered portable electronics.

  • Power Management in Portable and Battery-Powered Products

  • Cellular and Cordless Telephones
  • PCMCIA Cards

  • Low RDS(on) (MOSFET) and Low VCE(sat) (Transistor)
  • Higher Efficiency Extending Battery Life
  • Logic Level Gate Drive (MOSFET)
  • Performance DFN Package

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Product

Status

CAD Models

Compliance

Package Type

Case Outline

MSL Type

MSL Temp (°C)

Container Type

Container Qty.

ON Target

Channel Polarity

Silicon Family

Package Name

Type

Gate Level

Wide SOA Mosfets

Configuration

OPN in older Technology

V(BR)DSS Min (V)

RDS(on) Max @ VGS = 10 V (mΩ)

VGS Max (V)

Vgs(th) Max (V)

Id Max (A)

PD Max (W)

RDS(on) Max @ VGS = 2.5 V (mΩ)

RDS(on) Max @ VGS = 4.5 V (mΩ)

Qg Typ @ VGS = 4.5 V (nC)

Qg Typ @ VGS = 10 V (nC)

Ciss Typ (pF)

Qgd Typ @ VGS = 4.5 V (nC)

Qrr Typ (nC)

Coss Typ (pF)

Crss Typ (pF)

Reference Price

NUS5530MNR2G

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Lifetime

CAD Model

Pb

A

H

P

DFN-8

1

260

REEL

3000

N

N-Channel

PowerTrench® T1

Power 33 (u8FL)

Small Signal

Standard

0

NA

0

-

-

-

-

-

-

-

-

NA

-

NA

NA

NA

-

-

$0.6547

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