Low/Medium Voltage MOSFETs | NTMYS2D9N04CL

Power MOSFET, 40 V, 2.8 mOhm, 110 A, Single N-Channel

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Overview

Industrial Power MOSFET in a 5x6mm LFPAK package designed for compact and efficient designs and including high thermal performance.

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Package Type

Case Outline

MSL Type

MSL Temp (°C)

Container Type

Container Qty.

ON Target

Channel Polarity

Silicon Family

Package Name

Type

Gate Level

Wide SOA Mosfets

Configuration

OPN in older Technology

V(BR)DSS Min (V)

RDS(on) Max @ VGS = 10 V (mΩ)

Vgs (V)

Vgs(th) Max (V)

ID Max (A)

PD Max (W)

RDS(on) Max @ VGS = 2.5 V (mΩ)

RDS(on) Max @ VGS = 4.5 V (mΩ)

Qg Typ @ VGS = 4.5 V (nC)

Qg Typ @ VGS = 10 V (nC)

Ciss Typ (pF)

Qgd Typ @ VGS = 4.5 V (nC)

Qrr Typ (nC)

Coss Typ (pF)

Crss Typ (pF)

Reference Price

NTMYS2D9N04CLTWG

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CAD Model

Pb

A

H

P

LFPAK-4

760AB

1

260

REEL

3000

Y

N-Channel

PowerTrench® T6

Power 56 LFPAK

Low-Medium Voltage

Logic

0

Single

0

40

2.8

20

2

110

3.7

-

4.4

16

35

2100

5

31

1000

42

$0.8211

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Reliability Data

Die Related Summary Data

Device: NTMYS2D9N04CLTWG

Equivalent to wafer fab process: TRENCH FET

Product Technology

Product Technology

Equivalent Device-Hours

MTBF/MTTF in Hours

FITS

TRENCH FET

10

8953674244

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Re-calculate Data

Data is based on the following assumptions.

Note: The temperature and confidence level may be adjusted to your requirements.

Disclaimer: A reliability FIT rate calculated using this tool shall not be used for any functional safety purpose. In case a raw FIT rate needs to be estimated for a component which is targeted to be used in a safety critical application (i.e. compliant to ISO 26262 standard) it should be calculated according to generic safety standards (IEC62380, IEC61709, SN29500, FIDES, etc.)

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