Power MOSFET, Single N-Channel, 40 V, 0.67 mOhms, 420 A

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Overview

This N-Channel MV MOSFET is produced using ON Semiconductor’s advanced Power Trench process that incorporates Shielded Gate technology. This process has been optimized to minimize on-state resistance and yet maintain superior switching performance with best in class soft body diode.

  • Battery Switch
  • Switching power supplies
  • Load Switch
  • AC-DC Power Supplies
  • Motor Control
  • Small Footprint (8x8 mm)
  • Low RDS(on)
  • Low QG and Capacitance
  • RoHS Compliant

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Status

CAD Models

Compliance

Package Type

Case Outline

MSL Type

MSL Temp (°C)

Container Type

Container Qty.

ON Target

V(BR)DSS Min (V)

RDS(on) Max @ VGS = 10 V (mΩ)

Channel Polarity

Configuration

VGS Max (V)

VGS(th) Max (V)

ID Max (A)

PD Max (W)

RDS(on) Max @ VGS = 2.5 V (mΩ)

RDS(on) Max @ VGS = 4.5 V (mΩ)

Qg Typ @ VGS = 4.5 V (nC)

Qg Typ @ VGS = 10 V (nC)

Ciss Typ (pF)

Reference Price

NTMTS0D7N04CTXG

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Active

CAD Model

Pb

A

H

P

DFNW-8

1

260

REEL

3000

Y

40

0.67

N-Channel

Single

20

4

420

4.9

-

-

-

140

9230

$1.7908

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