NTMTS0D4N04CL

Single N-Channel Power MOSFET 40V, 553.8A, 0.4mΩ, PQFN 8x8

Overview

This N-Channel MV MOSFET is produced using ON Semiconductor’s advanced Power Trench process that incorporates Shielded Gate technology. This process has been optimized to minimize on-state resistance and yet maintain superior switching performance with best in class soft body diode.

Material Composition

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Compliance

Package Type

Case Outline

MSL Type

MSL Temp (°C)

Container Type

Container Qty.

V_(BR)DSS Min (V)

R_DS(on) Max @ V_GS = 10 V (mΩ)

Channel Polarity

Configuration

V_GS Max (V)

V_GS(th) Max (V)

I_D Max (A)

P_D Max (W)

R_DS(on) Max @ V_GS = 2.5 V (mΩ)

R_DS(on) Max @ V_GS = 4.5 V (mΩ)

Q_g Typ @ V_GS = 4.5 V (nC)

Q_g Typ @ V_GS = 10 V (nC)

C_iss Typ (pF)

Reference Price

NTMTS0D4N04CLTXG

Active

DFNW-8

507AP

260

REEL

3000

0.4

N-Channel

Single

2.5

553.8

0.64

163

341

20600

$2.6008

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MOSFETs | NTMTS0D4N04CL

Single N-Channel Power MOSFET 40V, 553.8A, 0.4mΩ, PQFN 8x8

Overview

Product List

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