Energy Efficient Innovations

Product Overview  


For complete documentation, see the data sheet.

Printed On: 7/11/2015

NTMFS4H01NF: Power MOSFET 25V 334A 0.7 mOhm Single N−Channel SO−8FL with Schottky

Product Description
Power MOSFET 25V 334A 0.7 mOhm Single N−Channel SO−8FL with Schottky
Features   Benefits
     
  • Integrated Schottky Diode
 
  • Increased efficiency
  • Low RDS(on)
 
  • Minimize conduction losses
  • Low input capacitance
 
  • Minimize switching losses
Applications   End Products
  • High Performance DC-DC Converters
  • Point of Load
 
  • Netcom, Telecom
  • Servers
Selected Electrical Specifications

Product Compliance Status Description Channel Polarity Configuration V(BR)DSS Min (V) VGS Max (V) VGS(th) Max (V) ID Max (A) PD Max (W) rDS(on) Max @ VGS = 2.5 V (mΩ) rDS(on) Max @ VGS = 4.5 V (mΩ) rDS(on) Max @ VGS = 10 V (mΩ) Qg Typ @ VGS = 4.5 V (nC) Qg Typ @ VGS = 10 V (nC) Qgd Typ @ VGS = 4.5 V (nC) Qrr Typ (nC) Ciss Typ (pF) Coss Typ (pF) Crss Typ (pF) Package Type
 Pb-free 
 Halide free 
 Active     Power MOSFET 25V 334A 0.7 mOhm Single N−Channel SO−8FL with Schottky, 25 V, 334 A, Single N?Channel, SO?8FL   N-Channel   with Schottky Diode   25   20   2.1   334   125     1   0.7   37.8     8     5538   3416   175.3   SO-8FL / DFN-5 
 Pb-free 
 Halide free 
 Active     Power MOSFET 25V 334A 0.7 mOhm Single N−Channel SO−8FL with Schottky, 25 V, 334 A, Single N−Channel, SO−8FL   N-Channel   with Schottky Diode   25   20   2.1   334   125     1   0.7   37.8     8     5538   3416   175.3   SO-8FL / DFN-5 
Package Availability
Type
PB free
Standard
SO-8FL / DFN-5 x