Dual N-Channel Power MOSFET with Integrated Schottky 30V

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Overview

Dual N-Channel Power MOSFET with Integrated Schottky 30 V, High Side 18 A / Low Side 23 A, Dual N−Channel SO8FL

  • DC−DC Converters
  • System Voltage Rails
  • Point of Load
  • Co−Packaged Power Stage Solution to Minimize Board Space
  • Minimized Parasitic Inductances
  • RoHS Compliant
  • Optimized Devices to Reduce Power Losses

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Product

Status

CAD Models

Compliance

Package Type

Case Outline

MSL Type

MSL Temp (°C)

Container Type

Container Qty.

ON Target

V(BR)DSS Min (V)

RDS(on) Max @ VGS = 10 V (mΩ)

Channel Polarity

Configuration

VGS Max (V)

VGS(th) Max (V)

ID Max (A)

PD Max (W)

RDS(on) Max @ VGS = 2.5 V (mΩ)

RDS(on) Max @ VGS = 4.5 V (mΩ)

Qg Typ @ VGS = 4.5 V (nC)

Qg Typ @ VGS = 10 V (nC)

Ciss Typ (pF)

Reference Price

NTMFD4902NFT1G

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Last Shipments

CAD Model

Pb

A

H

P

SO-8FL Dual / DFN-8

1

260

REEL

1500

N

30

Q1: 6.5 , Q2: 4.1

N-Channel

Dual

20

2.2

18.2

1.9

-

Q1: 10, Q2: 6.2

20.8

9.7

Q1: 1150, Q2: 1590

Price N/A

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