Dual P-Channel FETKY™ Power MOSFET -30V -4.0A 95mΩ

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Overview

Power MOSFET and Schottky Diode -30 V, -4.0 A, Single P-Channel with 20 V, 2.2A, Schottky Barrier Diode

  • Disk Drives
  • DC-DC Converters
  • Printers
  • FETKY™ Surface Mount Package Saves Board Space
  • Independent Pin-Out for MOSFET and Schottky Allowing forDesign Flexibility
  • Low RDS(on) MOSFET and Low VF Schottky to MinimizeConduction Losses
  • Optimized Gate Charge to Minimize Switching Losses

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Product

Status

CAD Models

Compliance

Package Type

Case Outline

MSL Type

MSL Temp (°C)

Container Type

Container Qty.

ON Target

V(BR)DSS Min (V)

RDS(on) Max @ VGS = 10 V (mΩ)

Channel Polarity

Configuration

VGS Max (V)

VGS(th) Max (V)

ID Max (A)

PD Max (W)

RDS(on) Max @ VGS = 2.5 V (mΩ)

RDS(on) Max @ VGS = 4.5 V (mΩ)

Qg Typ @ VGS = 4.5 V (nC)

Qg Typ @ VGS = 10 V (nC)

Ciss Typ (pF)

Reference Price

NTMD4184PFR2G

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Last Shipments

CAD Model

Pb

A

H

P

SOIC-8

1

260

REEL

2500

N

-30

95

P-Channel

with Schottky Diode

20

-3

-4

1.6

-

165

4.8

5.8

280

Price N/A

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