Dual N-Channel Power MOSFET with Integrated Schottky 30V

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Overview

Dual N-Channel Power MOSFET with Integrated Schottky30 V, High Side 11 A / Low Side 13 A, Dual N−Channel, WDFN (3 mm x 3 mm)

  • DC-DC Converters
  • System Voltage Rails
  • Point of Load
  • Desktop & Notebook Computers
  • Graphics Cards
  • Netcom/Telecom Equipment
  • Co-Packaged Power Stage Solution
  • Low Side MOSFET with Integrated Schottky
  • Minimized Parasitic Inductances
  • Optimized Devices to Reduce Power Losses
  • RoHS Compliant

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Product

Status

CAD Models

Compliance

Package Type

Case Outline

MSL Type

MSL Temp (°C)

Container Type

Container Qty.

ON Target

V(BR)DSS Min (V)

RDS(on) Max @ VGS = 10 V (mΩ)

Channel Polarity

Configuration

VGS Max (V)

VGS(th) Max (V)

ID Max (A)

PD Max (W)

RDS(on) Max @ VGS = 2.5 V (mΩ)

RDS(on) Max @ VGS = 4.5 V (mΩ)

Qg Typ @ VGS = 4.5 V (nC)

Qg Typ @ VGS = 10 V (nC)

Ciss Typ (pF)

Reference Price

NTLLD4901NFTWG

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Last Shipments

CAD Model

Pb

A

H

P

WDFN-8

1

260

REEL

3000

N

30

Q1: 17.4, Q2: 13.3

N-Channel

with Schottky Diode

20

2.2

7.1

1.82

-

Q1: 25, Q2: 20

10.4

5.5

Q1: 606, Q2: 660

Price N/A

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