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NTLJD3115P: Power MOSFET -20V -3.3A 100 mOhm Dual P-Channel WDFN6

Overview
Specifications
Packages
Datasheet: Power MOSFET -20 V, -4.1 A, µCool¿ Dual P-Channel, 2x2 mm WDFN Package
Rev. 6 (120.0kB)
»View Reliability Data
»View Material Composition
»Product Change Notification (9)
Product Overview
Product Description
Power MOSFET -20 V, -4.1 A, µCool™ Dual P-Channel, 2x2 mm WDFN Package
Features
 
  • WDFN Package Provides Exposed Drain Pad for Excellent Thermal Conduction
  • 2x2 mm Footprint Same as SC-88
  • Lowest RDS(on) Solution in 2x2 mm Package
  • 1.8 V RDS(on) Rating for Operation at Low Voltage Gate Drive Logic Level
  • Bidirectional Current Flow with Common Source Configuration
  • This is a Pb-Free Device
Applications
  • Optimized for Battery and Load Management Applications in Portable Equipment
  • Li-Ion Battery Charging and Protection Circuits
  • High Side Load Switch
Technical Documentation & Design Resources
Application Notes (2) Data Sheets (1)
Simulation Models (4) Package Drawings (1)
Availability and Samples
Product
Status
Compliance
Description
Package
MSL*
Container
Budgetary Price/Unit
Type
Case Outline
Type
Qty.
NTLJD3115PT1G Active
Pb-free
Halide free
Power MOSFET -20V -3.3A 100 mOhm Dual P-Channel WDFN6 WDFN-6 506AN 1 Tape and Reel 3000 $0.2
NTLJD3115PTAG Last Shipments 
Pb-free
Halide free
Power MOSFET -20V -3.3A 100 mOhm Dual P-Channel WDFN6 WDFN-6 506AN 1 Tape and Reel 3000  
Moisture Sensitivity level (MSL) for surface mount devices (lead free measured at 260°C reflow, non lead free at 235°C reflow)
Market Leadtime (weeks) : 4 to 8
Arrow   (Sat Jul 11 21:30:52 MST 2015) : 8954
Avnet   (2015-07-09) : >1K
Digikey   (2015-07-09) : >10K
Mouser   (2015-07-09) : <1K
PandS   (2015-07-09) : >1K
Market Leadtime (weeks) : Contact Factory
Datasheet: Power MOSFET -20 V, -4.1 A, µCool¿ Dual P-Channel, 2x2 mm WDFN Package
Rev. 6 (120.0kB)
»View Reliability Data
»View Material Composition
»Product Change Notification (9)
Product Overview

Product Compliance Status Description Channel Polarity Configuration V(BR)DSS Min (V) VGS Max (V) VGS(th) Max (V) ID Max (A) PD Max (W) rDS(on) Max @ VGS = 2.5 V (mΩ) rDS(on) Max @ VGS = 4.5 V (mΩ) rDS(on) Max @ VGS = 10 V (mΩ) Qg Typ @ VGS = 4.5 V (nC) Qg Typ @ VGS = 10 V (nC) Qgd Typ @ VGS = 4.5 V (nC) Qrr Typ (nC) Ciss Typ (pF) Coss Typ (pF) Crss Typ (pF) Package Type
 Pb-free 
 Halide free 
 Active     Power MOSFET -20V -3.3A 100 mOhm Dual P-Channel WDFN6   P-Channel   Dual   20   8   1   4.1   2.3   135   100     5.5     1.4   5   531   91   56   WDFN-6 
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