MOSFETs | NTJD4105C

Complementary Small Signal MOSFET

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Overview

This complementary dual device was designed with a small package (2 x 2 mm) and low RDS(on) MOSFETs for minimum footprint and increased circuit efficiency. The low RDS(on) performance is particularly suited for single or dual cell Li-Ion battery supplied devices such as cell phones, media players, digital cameras, and PDAs.

  • DC-DC Conversion
  • Load/Power Switching
  • Single or Dual Cell Li-Ion Battery Supplied Devices
  • Cell Phones
  • MP3s
  • Digital Cameras
  • PDAs
  • Complementary N and P Channel Device
  • Leading -8.0 V Trench for Low RDS(on) Performance
  • ESD Protected Gate-ESD Rating: Class 1
  • SC-88 Package for Small Footprint (2x2mm)

Material Composition

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CAD Models

Compliance

Package Type

Case Outline

MSL Type

MSL Temp (°C)

Container Type

Container Qty.

ON Target

V(BR)DSS Min (V)

RDS(on) Max @ VGS = 10 V (mΩ)

Channel Polarity

Configuration

VGS Max (V)

VGS(th) Max (V)

ID Max (A)

PD Max (W)

RDS(on) Max @ VGS = 2.5 V (mΩ)

RDS(on) Max @ VGS = 4.5 V (mΩ)

Qg Typ @ VGS = 4.5 V (nC)

Qg Typ @ VGS = 10 V (nC)

Ciss Typ (pF)

Reference Price

NTJD4105CT1G

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Active

CAD Model

Pb

A

H

P

SC-88-6 / SC-70-6 / SOT-363-6

419B-02

1

260

REEL

3000

Y

0

-

Complementary

Dual

12

1.5

0.63

0.27

N:445.0 , P:460.0

N: 375.0, P: 300

0.9

1.3

N(20V):33, P(-8V): 160

$0.102

More Details

NTJD4105CT2G

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Active

CAD Model

Pb

A

H

P

SC-88-6 / SC-70-6 / SOT-363-6

419B-02

1

260

REEL

3000

Y

0

-

Complementary

Dual

12

1.5

0.63

0.27

N:445.0 , P:460.0

N: 375.0, P: 300

0.9

1.3

N(20V):33, P(-8V): 160

$0.0953

More Details

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