NTJD1155L

Dual P-Channel High Side Load Switch with Level-Shift Power MOSFET -8V ±1.3A 175mΩ

Overview

The NTJD1155L integrates a P and N-Channel MOSFET in a single package. This device is particularly suited for portable electronic equipment where low control signals, low battery voltages and high load currents are needed. The
P-Channel device is specifically designed as a load switch using ON Semiconductor state-of-the-art trench technology. The N-Channel, with an external resistor (R1), functions as a level-shift to drive the P-Channel. The N-Channel MOSFET has internal ESD protection and can be driven by logic signals as low as 1.5 V. The NTJD1155L operates on supply lines from 1.8 to 8.0 V and can drive loads up to 1.3 A with 8.0 V applied to both V_IN and V_ON/OFF.

Applications

Integrated High Side Load Switch with built in Level Shift
Portable Equipment

End Products

Cell Phones
Digital Cameras
PDAs
Media Players

Features

Extremely Low R_DS(on) P-Channel Load Switch MOSFET
Level Shift MOSFET is ESD Protected
Low Profile, Small Footprint Package
V_IN Range 1.8 to 8.0 V
ON/OFF Range 1.5 to 8.0 V

Material Composition

Product Change Notification

Product List

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Product

Status

CAD Models

Compliance

Package Type

Case Outline

MSL Type

MSL Temp (°C)

Container Type

Container Qty.

V_(BR)DSS Min (V)

R_DS(on) Max @ V_GS = 10 V (mΩ)

Channel Polarity

Configuration

V_GS Max (V)

V_GS(th) Max (V)

I_D Max (A)

P_D Max (W)

R_DS(on) Max @ V_GS = 2.5 V (mΩ)

R_DS(on) Max @ V_GS = 4.5 V (mΩ)

Q_g Typ @ V_GS = 4.5 V (nC)

Q_g Typ @ V_GS = 10 V (nC)

C_iss Typ (pF)

Reference Price

NTJD1155LT1

Obsolete

SC-88-6 / SC-70-6 / SOT-363-6

419B-02

235

REEL

3000

-8

P-Channel

Level Shift

1.3

0.4

170

130

1.3

Price N/A

NTJD1155LT1G

Active

SC-88-6 / SC-70-6 / SOT-363-6

419B-02

260

REEL

3000

-8

P-Channel

Level Shift

1.3

0.4

170

130

1.3

$0.1431

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MOSFETs | NTJD1155L

Dual P-Channel High Side Load Switch with Level-Shift Power MOSFET -8V ±1.3A 175mΩ

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