feedback
Rate this webpage

Need
Support?


NTHD4P02: Power MOSFET -20V -3A 155 mOhm Dual P-Channel ChipFET FETky

Overview
Specifications
Datasheet: Power MOSFET and Schottky Diode -20 V, -3.0 A, Single P-Channel with 3.0 A Schottky Barrier Diode, ChipFET™
Rev. 7 (83.0kB)
»View Reliability Data
»View Material Composition
»Product Change Notification (7)
Product Overview
Product Description
Power MOSFET -20V -3A 155 mOhm Dual P-Channel ChipFET FETky
Features
 
  • Leadless SMD package featuring a MOSFET and Schottky Diode
  • 40% smaller than TSOP-6 package with similar thermal characteristics
  • Independent pinout to each device to ease circuit design
  • Ultra low VF Schottky
  • Pb-Free Package is Available
Applications
  • Li-Ion Battery Charging
  • High side DC-DC Conversion circuits
  • High side drive for small brushless DC motors
  • Power management in portable, battery powered products
Technical Documentation & Design Resources
Application Notes (2) Data Sheets (1)
Simulation Models (4) Package Drawings (1)
Availability and Samples
Product
Status
Compliance
Description
Package
MSL*
Container
Budgetary Price/Unit
Type
Case Outline
Type
Qty.
NTHD4P02FT1G Active
Pb-free
Halide free
Power MOSFET -20V -3A 155 mOhm Dual P-Channel ChipFET FETky ChipFET-8 1206A-03 1 Tape and Reel 3000 $0.16
NTHD4P02FT1 Obsolete
Power MOSFET -20V -3A 155 mOhm Dual P-Channel ChipFET FETky ChipFET-8 1206A-03 1 Tape and Reel 3000  
Moisture Sensitivity level (MSL) for surface mount devices (lead free measured at 260°C reflow, non lead free at 235°C reflow)
Market Leadtime (weeks) : 2 to 4
Mouser   (2015-07-09) : >1K
PandS   (2015-07-09) : >1K
Market Leadtime (weeks) : Contact Factory
Datasheet: Power MOSFET and Schottky Diode -20 V, -3.0 A, Single P-Channel with 3.0 A Schottky Barrier Diode, ChipFET™
Rev. 7 (83.0kB)
»View Reliability Data
»View Material Composition
»Product Change Notification (7)
Product Overview

Product Compliance Status Description Channel Polarity Configuration V(BR)DSS Min (V) VGS Max (V) VGS(th) Max (V) ID Max (A) PD Max (W) rDS(on) Max @ VGS = 2.5 V (mΩ) rDS(on) Max @ VGS = 4.5 V (mΩ) rDS(on) Max @ VGS = 10 V (mΩ) Qg Typ @ VGS = 4.5 V (nC) Qg Typ @ VGS = 10 V (nC) Qgd Typ @ VGS = 4.5 V (nC) Qrr Typ (nC) Ciss Typ (pF) Coss Typ (pF) Crss Typ (pF) Package Type
 Pb-free 
 Halide free 
 Active     Power MOSFET -20V -3A 155 mOhm Dual P-Channel ChipFET FETky   P-Channel   with Schottky Diode   20   12   1.2   3   2.1   240   155     6     0.9   15   185   95   30   ChipFET-8 
Previously Viewed Products
Clear List

New Products
 

NTP8G202N  Power GaN Cascode Transistor, 600 V, 290 mΩ Single N-Channel

  • Fast switching
  • Extremely low Qrr
  • High efficiencies

NDBA100N10B  NDPL100N10B  Power N-Channel MOSFETs, 100 V, 100 A

  • Low on-resistance as low as 6.9 mΩ
  • Low gate charge of 35 nC, and high speed switching
  • D2PAK and TO-220 available