feedback
Rate this webpage

Need
Support?


NTHD4102P: Power MOSFET -20V -4.1A 80 mOhm Dual P-Channel ChipFET

Overview
Specifications
Packages
Datasheet: Power MOSFET -20 V, -4.1 A Dual P-Channel ChipFET¿
Rev. 6 (100.0kB)
»View Reliability Data
»View Material Composition
»Product Change Notification (12)
Product Overview
Product Description
Power MOSFET -20 V, -4.1 A Dual P-Channel ChipFET™
Features
 
  • Offers an Ultra Low RDS (ON) Solution in the ChipFET™ Package
  • Miniature ChipFet Package 40% Smaller Footprint than TSOP-6
  • Low Profile (<1.1mm) Allows it to Fit Easily into Extremely Thin Environments such as Portable Electronics
  • Simplifies Circuit Designs since Additional Boost Circuits for Gate Voltages are not Required
  • Operated at Standard Logic Level Gate Drive, Facilitating Future Migration to Lower Levels using the same Basic Topology
  • Pb-Free Package is Available
Applications
  • Optimized for Battery and Load Management Applications in Portable Equipment such as MP3 Players, Cell Phones, and PDAs
  • Charge Control in Battery Chargers
  • Buck and Boost Converters
Technical Documentation & Design Resources
Application Notes (2) Data Sheets (1)
Simulation Models (4) Package Drawings (1)
Availability and Samples
Product
Status
Compliance
Description
Package
MSL*
Container
Budgetary Price/Unit
Type
Case Outline
Type
Qty.
NTHD4102PT1G Active
Pb-free
Halide free
Power MOSFET -20V -4.1A 80 mOhm Dual P-Channel ChipFET ChipFET-8 1206A-03 1 Tape and Reel 3000 $0.3333
NTHD4102PT3G Last Shipments 
Pb-free
Halide free
Power MOSFET -20V -4.1A 80 mOhm Dual P-Channel ChipFET ChipFET-8 1206A-03 1 Tape and Reel 10000  
NTHD4102PT1 Obsolete 
Power MOSFET -20V -4.1A 80 mOhm Dual P-Channel ChipFET ChipFET-8 1206A-03 1 Tape and Reel 3000  
Moisture Sensitivity level (MSL) for surface mount devices (lead free measured at 260°C reflow, non lead free at 235°C reflow)
Market Leadtime (weeks) : 4 to 8
Arrow   (Sat Jul 11 19:10:01 MST 2015) : 5450
Avnet   (2015-07-09) : >10K
Digikey   (2015-07-09) : >10K
Mouser   (2015-07-09) : >1K
PandS   (2015-07-09) : >1K
Market Leadtime (weeks) : Contact Factory
Market Leadtime (weeks) : Contact Factory
Datasheet: Power MOSFET -20 V, -4.1 A Dual P-Channel ChipFET¿
Rev. 6 (100.0kB)
»View Reliability Data
»View Material Composition
»Product Change Notification (12)
Product Overview

Product Compliance Status Description Channel Polarity Configuration V(BR)DSS Min (V) VGS Max (V) VGS(th) Max (V) ID Max (A) PD Max (W) rDS(on) Max @ VGS = 2.5 V (mΩ) rDS(on) Max @ VGS = 4.5 V (mΩ) rDS(on) Max @ VGS = 10 V (mΩ) Qg Typ @ VGS = 4.5 V (nC) Qg Typ @ VGS = 10 V (nC) Qgd Typ @ VGS = 4.5 V (nC) Qrr Typ (nC) Ciss Typ (pF) Coss Typ (pF) Crss Typ (pF) Package Type
 Pb-free 
 Halide free 
 Active     Power MOSFET -20V -4.1A 80 mOhm Dual P-Channel ChipFET   P-Channel   Dual   20   8   1.5   4.1   2.1   110   80     8.6     2.6   0.01   750   100   45   ChipFET-8 
Previously Viewed Products
Clear List

New Products
 

NTP8G202N  Power GaN Cascode Transistor, 600 V, 290 mΩ Single N-Channel

  • Fast switching
  • Extremely low Qrr
  • High efficiencies

NDBA100N10B  NDPL100N10B  Power N-Channel MOSFETs, 100 V, 100 A

  • Low on-resistance as low as 6.9 mΩ
  • Low gate charge of 35 nC, and high speed switching
  • D2PAK and TO-220 available