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NTGD4161P: Power MOSFET -30V -2.3A 160 mOhm Dual P-Channel TSOP6

Overview
Specifications
Packages
Datasheet: Power MOSFET -30 V, -2.3 A, Dual P-Channel, TSOP-6
Rev. 1 (67.0kB)
»View Reliability Data
»View Material Composition
»Product Change Notification (5)
Product Overview
Product Description
Power MOSFET -30 V, -2.3 A, Dual P-Channel, TSOP-6
Features
 
  • Fast Switching Speed
  • Low Gate Charge
  • Low RDS(on)
  • Indpendently Connected Devices to Provide Design Flexibility
  • This is a Pb-Free Device
Applications
  • Load Switch
  • Battery Protection
  • Portable Devices Like PDAs, Cellular Phones and Hard Drives
Technical Documentation & Design Resources
Simulation Models (4) Package Drawings (1)
Data Sheets (1)  
Availability and Samples
Product
Status
Compliance
Description
Package
MSL*
Container
Budgetary Price/Unit
Type
Case Outline
Type
Qty.
NTGD4161PT1G Active
Pb-free
Halide free
Power MOSFET -30V -2.3A 160 mOhm Dual P-Channel TSOP6 TSOP-6 318G-02 1 Tape and Reel 3000 Contact Sales Office
Moisture Sensitivity level (MSL) for surface mount devices (lead free measured at 260°C reflow, non lead free at 235°C reflow)
Market Leadtime (weeks) : Contact Factory
Arrow   (Sat Jul 11 14:09:41 MST 2015) : 675
PandS   (2015-07-09) : >1K
Datasheet: Power MOSFET -30 V, -2.3 A, Dual P-Channel, TSOP-6
Rev. 1 (67.0kB)
»View Reliability Data
»View Material Composition
»Product Change Notification (5)
Product Overview

Product Compliance Status Description Channel Polarity Configuration V(BR)DSS Min (V) VGS Max (V) VGS(th) Max (V) ID Max (A) PD Max (W) rDS(on) Max @ VGS = 2.5 V (mΩ) rDS(on) Max @ VGS = 4.5 V (mΩ) rDS(on) Max @ VGS = 10 V (mΩ) Qg Typ @ VGS = 4.5 V (nC) Qg Typ @ VGS = 10 V (nC) Qgd Typ @ VGS = 4.5 V (nC) Qrr Typ (nC) Ciss Typ (pF) Coss Typ (pF) Crss Typ (pF) Package Type
 Pb-free 
 Halide free 
 Active     Power MOSFET -30V -2.3A 160 mOhm Dual P-Channel TSOP6   P-Channel   Dual   30   20   3   2.3   1.3       160     7.1     3   281   50   28   TSOP-6 
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