Energy Efficient Innovations

Product Overview  


For complete documentation, see the data sheet.

Printed On: 7/11/2015

NTD4809N: Power MOSFET 30V 58A 9 mOhm Single N-Channel DPAK

Product Description
Power MOSFET 30 V, 58 A, Single N-Channel, DPAK/IPAK
Features
 
  • Low RDS(on) to Minimize Conduction Losses
  • Low Capacitance to Minimize Driver Losses
  • Optimized Gate Charge to Minimize Switching Losses
  • These are Pb-Free Devices
Applications
  • CPU Power Delivery
  • DC-DC Coverters
  • Low Side Switching
Selected Electrical Specifications

Product Compliance Status Description Channel Polarity Configuration V(BR)DSS Min (V) VGS Max (V) VGS(th) Max (V) ID Max (A) PD Max (W) rDS(on) Max @ VGS = 2.5 V (mΩ) rDS(on) Max @ VGS = 4.5 V (mΩ) rDS(on) Max @ VGS = 10 V (mΩ) Qg Typ @ VGS = 4.5 V (nC) Qg Typ @ VGS = 10 V (nC) Qgd Typ @ VGS = 4.5 V (nC) Qrr Typ (nC) Ciss Typ (pF) Coss Typ (pF) Crss Typ (pF) Package Type
 Pb-free 
 Halide free 
 Active     Power MOSFET 30V 58A 9 mOhm Single N-Channel DPAK   N-Channel   Single   30   20   2.5   58   52     14   9   11   25   5   9.2   1456   315   200   DPAK-3 
Package Availability
Type
PB free
Standard
IPAK-3 x  
DPAK-3 x  
IPAK-4 x