IGBT 650V 75A FS2 bare die

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Overview

This Insulated Gate Bipolar Transistor (IGBT) features a robust andcost effective Field Stop II Trench construction, and provides superiorperformance in demanding switching applications, offering both lowon state voltage and minimal switching loss.

  • Solar Inverter
  • Uninterruptible Power Inverter Supplies (UPS)
  • Welding
  • Extremely Efficient Trench with Field Stop Technology
  • TJmax = 175°C
  • Optimized for High Speed Switching
  • 5 µs Short Circuit Capability
  • These are Pb−Free Devices

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CAD Models

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ON Target

Family

V(BR)CES Typ (V)

IC Max (A)

VCE(sat) Typ (V)

VF Typ (V)

Eoff Typ (mJ)

Eon Typ (mJ)

Trr Typ (ns)

Irr Typ (A)

Gate Charge Typ (nC)

Short Circuit Withstand (µs)

EAS Typ (mJ)

PD Max (W)

Co-Packaged Diode

Reference Price

NGTD28T65F2SWK

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Obsolete

CAD Model

Pb

A

H

P

-

-

NA

0

PLRNG

1

N

-

650

-

1.75

-

-

-

-

-

-

5

-

-

-

Price N/A

More Details

NGTD28T65F2WP

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Last Shipments

CAD Model

Pb

A

H

P

-

-

NA

0

PLRNG

1

N

-

650

-

1.75

-

-

-

-

-

-

5

-

-

-

Price N/A

More Details

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