IGBT, 600 V, 50 A, FS1 Solar/UPS

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Overview

This Insulated Gate Bipolar Transistor (IGBT) features a robust and cost effective Trench construction, and provides superior performance in demanding switching applications, offering both low on state voltage and minimal switching loss.

  • Solar Inverters
  • Uninterruptible Power Supplies(UPS)
  • Low Saturation Voltage using Trench with Field Stop Technology
  • Low Switching Loss
  • Soft Fast Reverse Recovery Diode
  • Optimized for High Speed Switching
  • 5µs Short Circuit Capability

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Product

Status

CAD Models

Compliance

Package Type

Case Outline

MSL Type

MSL Temp (°C)

Container Type

Container Qty.

ON Target

Family

V(BR)CES Typ (V)

IC Max (A)

VCE(sat) Typ (V)

VF Typ (V)

Eoff Typ (mJ)

Eon Typ (mJ)

Trr Typ (ns)

Irr Typ (A)

Gate Charge Typ (nC)

Short Circuit Withstand (µs)

EAS Typ (mJ)

PD Max (W)

Co-Packaged Diode

Reference Price

NGTB50N60FLWG

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Obsolete

CAD Model

Pb

A

H

P

TO-247-3

NA

0

TUBE

30

N

-

600

50

1.65

1.85

0.6

1.1

85

8

310

5

-

223

Yes

Price N/A

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