Small Signal MOSFETs | NDT452AP

P-Channel Enhancement Mode Field Effect Transistor -30V, -5A, 65mΩ

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Overview

Power SOT P-Channel enhancement mode power field effect transistors are produced using onsemi's proprietary, high cell density, DMOS technology. This very high density process is especially tailored to minimize on-state resistance and provide superior switching performance. These devices are particularly suited for low voltage applications such as notebook computer power management and DC motor control.

  • This product is general usage and suitable for many different applications.

  • -5A, -30V.
    RDS(ON) = 0.065 Ω @ VGS = -10V
    RDS(ON) = 0.1 Ω @ VGS = -4.5V
  • High density cell design for extremely low RDS(ON)
  • High power and current handling capability in a widely used surface mount package

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Wide SOA Mosfets

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OPN in older Technology

V(BR)DSS Min (V)

RDS(on) Max @ VGS = 10 V (mΩ)

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RDS(on) Max @ VGS = 2.5 V (mΩ)

RDS(on) Max @ VGS = 4.5 V (mΩ)

Qg Typ @ VGS = 4.5 V (nC)

Qg Typ @ VGS = 10 V (nC)

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Qgd Typ @ VGS = 4.5 V (nC)

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Reference Price

NDT452AP

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CAD Model

Pb

A

H

P

SOT-223-4 / TO-261-4

318H-01

1

260

REEL

4000

N

P-Channel

PowerTrench® T1

SC-4

Small Signal

Logic

0

NA

0

-30

65

20

-3

-5

3

-

100

-

22

690

-

-

-

-

$0.3637

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Reliability Data

Die Related Summary Data

Device: NDT452AP

Equivalent to wafer fab process: TP

Product Technology

Product Technology

Equivalent Device-Hours

MTBF/MTTF in Hours

FITS

TP

8

738717284

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Re-calculate Data

Data is based on the following assumptions.

Note: The temperature and confidence level may be adjusted to your requirements.

Disclaimer: A reliability FIT rate calculated using this tool shall not be used for any functional safety purpose. In case a raw FIT rate needs to be estimated for a component which is targeted to be used in a safety critical application (i.e. compliant to ISO 26262 standard) it should be calculated according to generic safety standards (IEC62380, IEC61709, SN29500, FIDES, etc.)

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