P-Channel Enhancement Mode Field Effect Transistor -30V, -5A, 65mΩ

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Overview

Power SOT P-Channel enhancement mode power field effect transistors are produced using ON Semiconductor's proprietary, high cell density, DMOS technology. This very high density process is especially tailored to minimize on-state resistance and provide superior switching performance. These devices are particularly suited for low voltage applications such as notebook computer power management and DC motor control.

  • This product is general usage and suitable for many different applications.
  • -5A, -30V.
    RDS(ON) = 0.065 Ω @ VGS = -10V
    RDS(ON) = 0.1 Ω @ VGS = -4.5V
  • High density cell design for extremely low RDS(ON)
  • High power and current handling capability in a widely used surface mount package

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CAD Models

Compliance

Package Type

Case Outline

MSL Type

MSL Temp (°C)

Container Type

Container Qty.

ON Target

V(BR)DSS Min (V)

RDS(on) Max @ VGS = 10 V (mΩ)

Channel Polarity

Configuration

VGS Max (V)

VGS(th) Max (V)

ID Max (A)

PD Max (W)

RDS(on) Max @ VGS = 2.5 V (mΩ)

RDS(on) Max @ VGS = 4.5 V (mΩ)

Qg Typ @ VGS = 4.5 V (nC)

Qg Typ @ VGS = 10 V (nC)

Ciss Typ (pF)

Reference Price

NDT452AP

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Active

CAD Model

Pb

A

H

P

SOT-223-4 / TO-261-4

1

260

REEL

4000

N

-30

65

P-Channel

Single

20

-3

-5

3

-

100

-

22

690

$0.3637

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