NDT452AP

P-Channel Enhancement Mode Field Effect Transistor -30V, -5A, 65mΩ

Overview

Power SOT P-Channel enhancement mode power field effect transistors are produced using ON Semiconductor's proprietary, high cell density, DMOS technology. This very high density process is especially tailored to minimize on-state resistance and provide superior switching performance. These devices are particularly suited for low voltage applications such as notebook computer power management and DC motor control.

Applications

This product is general usage and suitable for many different applications.

Features

-5A, -30V.
R_DS(ON) = 0.065 Ω @ V_GS = -10V
R_DS(ON) = 0.1 Ω @ V_GS = -4.5V
High density cell design for extremely low R_DS(ON)
High power and current handling capability in a widely used surface mount package

Material Composition

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CAD Models

Compliance

Package Type

Case Outline

MSL Type

MSL Temp (°C)

Container Type

Container Qty.

V_(BR)DSS Min (V)

R_DS(on) Max @ V_GS = 10 V (mΩ)

Channel Polarity

Configuration

V_GS Max (V)

V_GS(th) Max (V)

I_D Max (A)

P_D Max (W)

R_DS(on) Max @ V_GS = 2.5 V (mΩ)

R_DS(on) Max @ V_GS = 4.5 V (mΩ)

Q_g Typ @ V_GS = 4.5 V (nC)

Q_g Typ @ V_GS = 10 V (nC)

C_iss Typ (pF)

Reference Price

NDT452AP

Active

SOT-223-4 / TO-261-4

318H-01

260

REEL

4000

-30

P-Channel

Single

-3

-5

100

690

$0.3637

Product Number:

Distributor		Stock	BUY

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MOSFETs | NDT452AP

P-Channel Enhancement Mode Field Effect Transistor -30V, -5A, 65mΩ

Overview

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