P-Channel Enhancement Mode Field Effect Transistor -60V, -2.5A, 300mΩ

Overview

This 60V P-Channel MOSFET is produced using onsemi Semiconductor’s high voltage Trench process. It has been optimized for power management plications.

  • This product is general usage and suitable for many different applications.
  • DC/DC Converters
  • Power Management

  • -2.5A, -60V
  • RDS(ON) = 300mΩ @ VGS = -10V
  • RDS(ON) = 500mΩ @ VGS = -4.5V
  • High density cell design for extremely low RDS(ON)
  • High power and current handling capability in a widelyused surface mount package.

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Product

Status

CAD Models

Compliance

Package Type

Case Outline

MSL Type

MSL Temp (°C)

Container Type

Container Qty.

ON Target

Channel Polarity

Silicon Family

Package Name

Type

Gate Level

Wide SOA Mosfets

Configuration

OPN in older Technology

V(BR)DSS Min (V)

RDS(on) Max @ VGS = 10 V (mΩ)

VGS Max (V)

Vgs(th) Max (V)

Id Max (A)

PD Max (W)

RDS(on) Max @ VGS = 2.5 V (mΩ)

RDS(on) Max @ VGS = 4.5 V (mΩ)

Qg Typ @ VGS = 4.5 V (nC)

Qg Typ @ VGS = 10 V (nC)

Ciss Typ (pF)

Qgd Typ @ VGS = 4.5 V (nC)

Qrr Typ (nC)

Coss Typ (pF)

Crss Typ (pF)

Reference Price

NDT2955

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Active

CAD Model

Pb

A

H

P

SOT-223-4 / TO-261-4

1

260

REEL

4000

N

P-Channel

PowerTrench® T1

SC-4

Small Signal

Logic

0

NA

0

-60

300

±20

-4

-2.5

1

-

500

-

11

601

2.7

40

85

35

$0.2332

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