Small Signal MOSFETs | NDT2955

P-Channel Enhancement Mode Field Effect Transistor -60V, -2.5A, 300mΩ

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Overview

This 60V P-Channel MOSFET is produced using onsemi Semiconductor’s high voltage Trench process. It has been optimized for power management plications.

  • This product is general usage and suitable for many different applications.
  • DC/DC Converters
  • Power Management

  • -2.5A, -60V
  • RDS(ON) = 300mΩ @ VGS = -10V
  • RDS(ON) = 500mΩ @ VGS = -4.5V
  • High density cell design for extremely low RDS(ON)
  • High power and current handling capability in a widelyused surface mount package.

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MSL Type

MSL Temp (°C)

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ON Target

Channel Polarity

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Package Name

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Gate Level

Wide SOA Mosfets

Configuration

OPN in older Technology

V(BR)DSS Min (V)

RDS(on) Max @ VGS = 10 V (mΩ)

VGS Max (V)

Vgs(th) Max (V)

Id Max (A)

PD Max (W)

RDS(on) Max @ VGS = 2.5 V (mΩ)

RDS(on) Max @ VGS = 4.5 V (mΩ)

Qg Typ @ VGS = 4.5 V (nC)

Qg Typ @ VGS = 10 V (nC)

Ciss Typ (pF)

Qgd Typ @ VGS = 4.5 V (nC)

Qrr Typ (nC)

Coss Typ (pF)

Crss Typ (pF)

Reference Price

NDT2955

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CAD Model

Pb

A

H

P

SOT-223-4 / TO-261-4

318H-01

1

260

REEL

4000

N

P-Channel

PowerTrench® T1

SC-4

Small Signal

Logic

0

NA

0

-60

300

±20

-4

-2.5

1

-

500

-

11

601

2.7

40

85

35

$0.2332

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Reliability Data

Die Related Summary Data

Device: NDT2955

Equivalent to wafer fab process: TR

Product Technology

Product Technology

Equivalent Device-Hours

MTBF/MTTF in Hours

FITS

TR

1

1603286882

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Re-calculate Data

Data is based on the following assumptions.

Note: The temperature and confidence level may be adjusted to your requirements.

Disclaimer: A reliability FIT rate calculated using this tool shall not be used for any functional safety purpose. In case a raw FIT rate needs to be estimated for a component which is targeted to be used in a safety critical application (i.e. compliant to ISO 26262 standard) it should be calculated according to generic safety standards (IEC62380, IEC61709, SN29500, FIDES, etc.)

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