NDS9952A

Dual N & P-Channel Enhancement Mode Field Effect Transistor 30V

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Overview

These dual N- and P-channel enhancement mode power field effect transistors are produced using ON Semiconductor's proprietary, high cell density, DMOS technology. This very high density process is especially tailored to minimize on-state resistance, provide superior switching performance, and withstand high energy pulses in the avalanche and commutation modes. These devices are particularly suited for low voltage applications such as notebook computer power management and other battery powered circuits where fast switching, low in-line power loss, and resistance to transients are needed.

Applications

This product is general usage and suitable for many different applications.

Features

N-Channel: 3.7A, 30V, R_DS(ON)=0.08W @ V_GS=10V,
P-Channel: -2.9A, -30V, R_DS(ON)=0.13W @ V_GS=-10V.
High density cell design for extremely low R_DS(ON).
High power and current handling capability in a widely used surface mount package.
Dual (N & P-Channel) MOSFET in surface mount package.

Material Composition

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Compliance

Package Type

Case Outline

MSL Type

MSL Temp (°C)

Container Type

Container Qty.

V_(BR)DSS Min (V)

R_DS(on) Max @ V_GS = 10 V (mΩ)

Channel Polarity

Configuration

V_GS Max (V)

V_GS(th) Max (V)

I_D Max (A)

P_D Max (W)

R_DS(on) Max @ V_GS = 2.5 V (mΩ)

R_DS(on) Max @ V_GS = 4.5 V (mΩ)

Q_g Typ @ V_GS = 4.5 V (nC)

Q_g Typ @ V_GS = 10 V (nC)

C_iss Typ (pF)

Reference Price

NDS9952A

Obsolete

SOIC-8

751EB

260

REEL

2500

±30

N:80,P:130

Complementary

Dual

±2.8

N: 3.7, P: -2.9

1.6

N:110,P:200

N: 320, P: 350

Price N/A

NDS9952A-F011

Obsolete

SOIC-8

751EB

260

REEL

4000

±30

N:80,P:130

Complementary

Dual

±2.8

N: 3.7, P: -2.9

1.6

N:110,P:200

N: 320, P: 350

Price N/A

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MOSFETs | NDS9952A

Dual N & P-Channel Enhancement Mode Field Effect Transistor 30V

Overview

Product List

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