NDS8434

Single P-Channel Enhancement Mode Field Effect Transistor -20V, -6.5A, 35mΩ

Overview

These P-Channel enhancement mode power field effect transistors are produced using ON Semiconductor's proprietary, high cell density, DMOS technology. This very high density process is especially tailored to minimize on-state resistance and provide superior switching performance. These devices are particularly suited for low voltage applications such as notebook computer power management and other battery powered circuits where fast switching, low in-line power loss, and resistance to transients are needed.

Applications

This product is general usage and suitable for many different applications.

Features

-6.5 A, -20 V
r_DS(ON) = 35 mΩ @ V_GS = -4.5 V
r_DS(ON) = 50 mΩ @ V_GS = -2.7 V
High Density Cell Design for Extremely Low r_DS(ON)
High Power and Current Handling Capability in a Widely Used Surface Mount Package

Material Composition

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CAD Models

Compliance

Package Type

Case Outline

MSL Type

MSL Temp (°C)

Container Type

Container Qty.

V_(BR)DSS Min (V)

R_DS(on) Max @ V_GS = 10 V (mΩ)

Channel Polarity

Configuration

V_GS Max (V)

V_GS(th) Max (V)

I_D Max (A)

P_D Max (W)

R_DS(on) Max @ V_GS = 2.5 V (mΩ)

R_DS(on) Max @ V_GS = 4.5 V (mΩ)

Q_g Typ @ V_GS = 4.5 V (nC)

Q_g Typ @ V_GS = 10 V (nC)

C_iss Typ (pF)

Reference Price

NDS8434

Obsolete

SOIC-8

751EB

260

REEL

2500

-20

P-Channel

Single

-8

-1

-6.5

2.5

2330

Price N/A

Product Number:

Distributor		Stock	BUY

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MOSFETs | NDS8434

Single P-Channel Enhancement Mode Field Effect Transistor -20V, -6.5A, 35mΩ

Overview

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