NDS331N

N-Channel Logic Level Enhancement Mode Field Effect Transistor 20V, 1.3A, 0.21Ω

Overview

These N-Channel logic level enhancement mode power field effect transistors are produced using ON Semiconductor's proprietary, high cell density, DMOS technology. This very high density process is especially tailored to minimize on-state resistance. These devices are particularly suited for low voltage applications in notebook computers, portable phones, PCMCIA cards, and other battery powered circuits where fast switching, and low in-line power loss are needed in a very small outline surface mount package.

Applications

This product is general usage and suitable for many different applications.

Features

1.3 A, 20 V
R_DS(ON) = 0.21Ω @ V_GS= 2.7 V
R_DS(ON) = 0.16 Ω @ V_GS= 4.5 V
Industry standard outline SOT-23 surface mount package using poprietary SuperSOT™-3 design for superior thermal and electrical capabilities
High density cell design for extremely low R_DS(ON)
Exceptional on-resistance and maximum DC current capability

Material Composition

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CAD Models

Compliance

Package Type

Case Outline

MSL Type

MSL Temp (°C)

Container Type

Container Qty.

V_(BR)DSS Min (V)

R_DS(on) Max @ V_GS = 10 V (mΩ)

Channel Polarity

Configuration

V_GS Max (V)

V_GS(th) Max (V)

I_D Max (A)

P_D Max (W)

R_DS(on) Max @ V_GS = 2.5 V (mΩ)

R_DS(on) Max @ V_GS = 4.5 V (mΩ)

Q_g Typ @ V_GS = 4.5 V (nC)

Q_g Typ @ V_GS = 10 V (nC)

C_iss Typ (pF)

Reference Price

NDS331N

Active

SOT-23-3

527AG

260

REEL

3000

N-Channel

Single

1.3

0.5

210

160

1.3

3.5

162

$0.1315

Product Number:

Distributor		Stock	BUY

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MOSFETs | NDS331N

N-Channel Logic Level Enhancement Mode Field Effect Transistor 20V, 1.3A, 0.21Ω

Overview

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