N-Channel Enhancement Mode Field Effect Transistor 60V, 75A, 13mΩ

Obsolete

Overview

These N-Channel enhancement mode power field effect transistors are produced using onsemi's proprietary, high cell density, DMOS technology. This very high density process is especially tailored to minimize on-state resistance, provide superior switching performance, and withstand high energy pulses in the avalanche and commutation modes. These devices are particularly suited for low voltage applications such as automotive, DC/DC converters, PWM motor controls, and other battery powered circuits where fast switching, low in-line power loss, and resistance to transients are needed.

  • This product is general usage and suitable for many different applications.

  • 75 A, 60 V. RDS(ON) = 0.013 Ω @ VGS= 10 V.
  • Critical DC electrical parameters specified at elevated temperature.
  • Rugged internal source-drain diode can eliminate the need for an external Zener diode transient suppressor.
  • 175°C maximum junction temperature rating.
  • High density cell design for extremely low RDS(ON).
  • TO-220 and TO-263 (D2PAK) package for both through hole and surface mount applications.

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Product

Status

CAD Models

Compliance

Package Type

Case Outline

MSL Type

MSL Temp (°C)

Container Type

Container Qty.

ON Target

Channel Polarity

Silicon Family

Package Name

Type

Gate Level

Wide SOA Mosfets

Configuration

OPN in older Technology

V(BR)DSS Min (V)

RDS(on) Max @ VGS = 10 V (mΩ)

Vgs (V)

Vgs(th) Max (V)

ID Max (A)

PD Max (W)

RDS(on) Max @ VGS = 2.5 V (mΩ)

RDS(on) Max @ VGS = 4.5 V (mΩ)

Qg Typ @ VGS = 4.5 V (nC)

Qg Typ @ VGS = 10 V (nC)

Ciss Typ (pF)

Qgd Typ @ VGS = 4.5 V (nC)

Qrr Typ (nC)

Coss Typ (pF)

Crss Typ (pF)

Reference Price

NDP7060

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Obsolete

CAD Model

Pb

A

H

P

TO-220-3

NA

0

TUBE

800

N

N-Channel

PowerTrench® T1

TO-220

Low-Medium Voltage

Standard

0

Single

0

60

13

±20

4

75

115

-

-

3.7

100

2960

51

-

1130

380

Price N/A

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