Single N-Channel Power MOSFET 250V, 10A, 420mΩ

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Overview

This N-Channel Power MOSFET is produced using ON Semiconductor’s trench technology, which is specifically designed to minimize input capacitance and gate charge. This devices is suitable for applications with low gate charge driving requirements.

  • Battery Protection
  • Motor Drive
  • Primary Side Switch
  • Secondary Side Synchronous Rectification
  • Multi-Cells Battery Pack (ESS, E-Bike, P-Tool)
  • Other Motor
  • Power Supply
  • High Speed Switching
  • ESD Diode-Protected Gate
  • Low Gate Charge
  • 100% Avalanche Tested
  • Pb-Free, Halogen Free and RoHS Compliance

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Product

Status

CAD Models

Compliance

Package Type

Case Outline

MSL Type

MSL Temp (°C)

Container Type

Container Qty.

ON Target

V(BR)DSS Min (V)

RDS(on) Max @ VGS = 10 V (mΩ)

Channel Polarity

Configuration

VGS Max (V)

VGS(th) Max (V)

ID Max (A)

PD Max (W)

RDS(on) Max @ VGS = 2.5 V (mΩ)

RDS(on) Max @ VGS = 4.5 V (mΩ)

Qg Typ @ VGS = 4.5 V (nC)

Qg Typ @ VGS = 10 V (nC)

Ciss Typ (pF)

Reference Price

NDDP010N25AZT4H

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Last Shipments

CAD Model

Pb

A

H

P

DPAK-3 / TO-252-3

1

260

REEL

700

N

250

420

N-Channel

Single

30

4.5

10

52

-

-

-

16

980

Price N/A

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