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NDDP010N25AZ: Power MOSFET, 250 V, 10 A, 420 mΩ, Single N-Channel

Overview
Specifications
Datasheet: Power MOSFET, 250V, 10A, 420mOhm, N-Channel
Rev. 2 (383kB)
»View Material Composition
»No Product Change Notifications exist
Product Overview
Product Description
This N-Channel Power MOSFET is produced using ON Semiconductor’s trench technology, which is specifically designed to minimize input capacitance and gate charge. This devices is suitable for applications with low gate charge driving requirements.
Features   Benefits
     
  • High Speed Switching
 
  • Reduces dynamic power losses
  • ESD Diode-Protected Gate
 
  • ESD resistance
  • Low Gate Charge
 
  • Ease of drive, faster turn-on
  • 100% Avalanche Tested
 
  • Voltage overstress safeguard
  • Pb-Free, Halogen Free and RoHS Compliance
 
  • Environment friendliness
Applications   End Products
  • Battery Protection
  • Motor Drive
  • Primary Side Switch
  • Secondary Side Synchronous Rectification
 
  • Multi-Cells Battery Pack (ESS, E-Bike, P-Tool)
  • Other Motor
  • Power Supply
Technical Documentation & Design Resources
Data Sheets (1) Package Drawings (2)
Availability and Samples
Product
Status
Compliance
Description
Package
MSL*
Container
Budgetary Price/Unit
Type
Case Outline
Type
Qty.
NDDP010N25AZ-1H Active
Pb-free
Halide free
Power MOSFET, 250 V, 10 A, 420 mΩ, Single N-Channel IPAK / TP 369AJ NA Bulk Bag 500 $0.288
NDDP010N25AZT4H Active
Pb-free
Halide free
Power MOSFET, 250 V, 10 A, 420 mΩ, Single N-Channel DPAK / TP-FA 369AH 1 Tape and Reel 700 $0.2688
Moisture Sensitivity level (MSL) for surface mount devices (lead free measured at 260°C reflow, non lead free at 235°C reflow)
Market Leadtime (weeks) : 2 to 4
Digikey   (2015-07-09) : <1K
Mouser   (2015-07-09) : <1K
Market Leadtime (weeks) : 2 to 4
Mouser   (2015-07-09) : >1K
Datasheet: Power MOSFET, 250V, 10A, 420mOhm, N-Channel
Rev. 2 (383kB)
»View Material Composition
»No Product Change Notifications exist
Product Overview

Product Compliance Status Description Channel Polarity Configuration V(BR)DSS Min (V) VGS Max (V) VGS(th) Max (V) ID Max (A) PD Max (W) rDS(on) Max @ VGS = 2.5 V (mΩ) rDS(on) Max @ VGS = 4.5 V (mΩ) rDS(on) Max @ VGS = 10 V (mΩ) Qg Typ @ VGS = 4.5 V (nC) Qg Typ @ VGS = 10 V (nC) Qgd Typ @ VGS = 4.5 V (nC) Qrr Typ (nC) Ciss Typ (pF) Coss Typ (pF) Crss Typ (pF) Package Type
 Pb-free 
 Halide free 
 Active     Power MOSFET, 250 V, 10 A, 420 mΩ, Single N-Channel   N-Channel   Single   250   30   4.5   10   52       420     16     540   980   80   25   IPAK / TP 
 Pb-free 
 Halide free 
 Active     Power MOSFET, 250 V, 10 A, 420 mΩ, Single N-Channel   N-Channel   Single   250   30   4.5   10   52       420     16     540   980   80   25   DPAK / TP-FA 
Datasheet: Power MOSFET, 250V, 10A, 420mOhm, N-Channel
Rev. 2 (383kB)
»View Material Composition
»No Product Change Notifications exist
Product Overview
Case Outlines
369AJ    369AH   
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