Single P-Channel Power MOSFET, -30V, -2.0A, 215mΩ

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Overview

This Power MOSFET is produced using ON Semiconductor’s trench technology, which is specifically designed to minimize gate charge and low on resistance. This device is suitable for applications with low gate charge driving or low on resistance requirements.

  • Load switch
  • Body Control Module
  • LED Lighting
  • 1.8V drive
  • Pb-Free, Halogen Free and RoHS compliance
  • ESD Diode-Protected Gate
  • Low On-Resistance

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2

Product

Status

CAD Models

Compliance

Package Type

Case Outline

MSL Type

MSL Temp (°C)

Container Type

Container Qty.

ON Target

V(BR)DSS Min (V)

RDS(on) Max @ VGS = 10 V (mΩ)

Channel Polarity

Configuration

VGS Max (V)

VGS(th) Max (V)

ID Max (A)

PD Max (W)

RDS(on) Max @ VGS = 2.5 V (mΩ)

RDS(on) Max @ VGS = 4.5 V (mΩ)

Qg Typ @ VGS = 4.5 V (nC)

Qg Typ @ VGS = 10 V (nC)

Ciss Typ (pF)

Reference Price

MCH3333A-TL-H

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Obsolete

CAD Model

Pb

A

H

P

SC-70FL / MCPH-3

1

260

REEL

3000

N

-30

-

P-Channel

Single

-10

1.3

-2

0.9

280

215

-

2.8

240

Price N/A

More Details

MCH3333A-TL-W

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Last Shipments

CAD Model

Pb

A

H

P

SC-70FL / MCPH-3

1

260

REEL

3000

N

-30

-

P-Channel

Single

-10

1.3

-2

0.9

280

215

-

2.8

240

Price N/A

More Details

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