Power MOSFET, N-Channel, A-FET, 200 V, 1.13 A, 800 mΩ, SOT-223

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Overview

These N-Channel enhancement mode power field effect transistors are produced using ON Semiconductor's proprietary, planar, DMOS technology. This advanced technology has been especially tailored to minimize on-state resistance, provide superior switching performance, ad withstand high energy pulse in the avalanche and commutation mode. These devices are well suited for high efficiency switching DC/DC converters, switch mode power supplies, DC-AC converters for uninterrupted power supply and motor control.

  • This product is general usage and suitable for many different applications
  • Avalanche Rugged Technology
  • Rugged Gate Oxide Technology
  • Lower Input Capacitance
  • Improved Gate Charge
  • Extended Safe Operating Area
  • Lower Leakage Current : 10 μA (Max.) @ VDS = 200 V
  • Lower rDS(on) : 0.609 Ω (Typ.)

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Status

CAD Models

Compliance

Package Type

Case Outline

MSL Type

MSL Temp (°C)

Container Type

Container Qty.

ON Target

V(BR)DSS Min (V)

RDS(on) Max @ VGS = 10 V (mΩ)

Channel Polarity

Configuration

VGS Max (V)

VGS(th) Max (V)

ID Max (A)

PD Max (W)

RDS(on) Max @ VGS = 2.5 V (mΩ)

RDS(on) Max @ VGS = 4.5 V (mΩ)

Qg Typ @ VGS = 4.5 V (nC)

Qg Typ @ VGS = 10 V (nC)

Ciss Typ (pF)

Reference Price

IRLM220ATF

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Last Shipments

CAD Model

Pb

A

H

P

SOT-223-4 / TO-261-4

1

250

REEL

4000

N

200

-

N-Channel

Single

±20

100

1.13

2

-

800

2.8

10.3

330

Price N/A

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