IRLM220A

Power MOSFET, N-Channel, A-FET, 200 V, 1.13 A, 800 mΩ, SOT-223

Overview

These N-Channel enhancement mode power field effect transistors are produced using ON Semiconductor's proprietary, planar, DMOS technology. This advanced technology has been especially tailored to minimize on-state resistance, provide superior switching performance, ad withstand high energy pulse in the avalanche and commutation mode. These devices are well suited for high efficiency switching DC/DC converters, switch mode power supplies, DC-AC converters for uninterrupted power supply and motor control.

Applications

This product is general usage and suitable for many different applications

Features

Avalanche Rugged Technology
Rugged Gate Oxide Technology
Lower Input Capacitance
Improved Gate Charge
Extended Safe Operating Area
Lower Leakage Current : 10 μA (Max.) @ V_DS = 200 V
Lower r_DS(on) : 0.609 Ω (Typ.)

Material Composition

Product Change Notification

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CAD Models

Compliance

Package Type

Case Outline

MSL Type

MSL Temp (°C)

Container Type

Container Qty.

V_(BR)DSS Min (V)

R_DS(on) Max @ V_GS = 10 V (mΩ)

Channel Polarity

Configuration

V_GS Max (V)

V_GS(th) Max (V)

I_D Max (A)

P_D Max (W)

R_DS(on) Max @ V_GS = 2.5 V (mΩ)

R_DS(on) Max @ V_GS = 4.5 V (mΩ)

Q_g Typ @ V_GS = 4.5 V (nC)

Q_g Typ @ V_GS = 10 V (nC)

C_iss Typ (pF)

Reference Price

IRLM220ATF

Last Shipments

SOT-223-4 / TO-261-4

318H-01

250

REEL

4000

200

N-Channel

Single

±20

100

1.13

800

2.8

10.3

330

Price N/A

Product Number:

Distributor		Stock	BUY

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MOSFETs | IRLM220A

Power MOSFET, N-Channel, A-FET, 200 V, 1.13 A, 800 mΩ, SOT-223

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