HUF75639S3S

N-Channel UltraFET Power MOSFET 100V, 56A, 25mΩ

Overview

These N-Channel power MOSFETs are manufactured using the innovative UltraFET^® process. This advanced process technology achieves the lowest possible on-resistance per silicon area, resulting in outstanding performance. This device is capable of withstanding high energy in the avalanche mode and the diode exhibits very low reverse recovery time and stored charge. It was designed for use in applications where power efficiency is important, such as switching regulators, switching converters, motor drivers, relay drivers, low-voltage bus switches, and power management in portable and battery-operated products.

Applications

AC-DC Merchant Power Supply
Consumer Appliances
DC-DC Merchant Power Supply
Desktop PC
Distribution

Features

56A, 100V
Temperature Compensated PSPICE^® and SABER™ Electrical Models
SPICE and SABER Thermal Impedance Models
Peak Current vs Pulse Width Curve
UIS Rating Curve

Material Composition

Product Change Notification

Product List

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Product

Status

CAD Models

Compliance

Package Type

Case Outline

MSL Type

MSL Temp (°C)

Container Type

Container Qty.

V_(BR)DSS Min (V)

R_DS(on) Max @ V_GS = 10 V (mΩ)

Channel Polarity

Configuration

V_GS Max (V)

V_GS(th) Max (V)

I_D Max (A)

P_D Max (W)

R_DS(on) Max @ V_GS = 2.5 V (mΩ)

R_DS(on) Max @ V_GS = 4.5 V (mΩ)

Q_g Typ @ V_GS = 4.5 V (nC)

Q_g Typ @ V_GS = 10 V (nC)

C_iss Typ (pF)

Reference Price

HUF75639S3ST

Active

D2PAK-3 / TO-263-2

418AJ

245

REEL

800

100

N-Channel

Single

±20

200

2000

$1.1805

Product Number:

Distributor		Stock	BUY

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MOSFETs | HUF75639S3S

N-Channel UltraFET Power MOSFET 100V, 56A, 25mΩ

Overview

Product List

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