HUF75639G3

N-Channel UltraFET Power MOSFET 100 V, 56 A, 25 mΩ

Overview

These N-Channel power MOSFETs are manufactured using the innovative UltraFET process. This advanced process technology achieves the lowest possible on-resistance per silicon area, resulting in outstanding performance. This device is capable of withstanding high energy in the avalanche mode and the diode exhibits very low reverse recovery time and stored charge. It was designed for use in applications where power efficiency is important, such as switching regulators, switching converters, motor drivers, relay drivers, low-voltage bus switches, and power management in portable and battery-operated products.

Applications

AC-DC Merchant Power Supply - Servers & Workstations
Workstation
Server & Mainframe

Features

56A, 100V
SPICE and SABER Thermal Impedance Models
Temperature Compensated PSPICE^® and SABER™ Electrical Models
Peak Current vs Pulse Width Curve
UIS Rating Curve

Material Composition

Product Change Notification

Product List

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Status

CAD Models

Compliance

Package Type

Case Outline

MSL Type

MSL Temp (°C)

Container Type

Container Qty.

V_(BR)DSS Min (V)

R_DS(on) Max @ V_GS = 10 V (mΩ)

Channel Polarity

Configuration

V_GS Max (V)

V_GS(th) Max (V)

I_D Max (A)

P_D Max (W)

R_DS(on) Max @ V_GS = 2.5 V (mΩ)

R_DS(on) Max @ V_GS = 4.5 V (mΩ)

Q_g Typ @ V_GS = 4.5 V (nC)

Q_g Typ @ V_GS = 10 V (nC)

C_iss Typ (pF)

Reference Price

HUF75639G3

Active

TO-247-3

340CK

TUBE

450

100

N-Channel

Single

±20

200

2000

$1.672

Product Number:

Distributor		Stock	BUY

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MOSFETs | HUF75639G3

N-Channel UltraFET Power MOSFET 100 V, 56 A, 25 mΩ

Overview

Product List

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