FQU9N25

Power MOSFET, N-Channel, QFET^®, 250 V, 7.4 A, 420 mΩ, IPAK

Overview

This N-Channel enhancement mode power MOSFET is produced using ON Semiconductor Semiconductor’s proprietary planar stripe and DMOS technology. This advanced MOSFET technology has been especially tailored to reduce on-state resistance, and to provide superior switching performance and high avalanche energy strength. These devices are suitable for switched mode power supplies, active power factor correction (PFC), and electronic lamp ballasts.

Applications

Lighting

Features

7.4A, 250V, R_DS(on) = 420mΩ(Max.) @V_GS = 10 V, I_D = 3.7A
Low gate charge ( Typ. 15.5nC)
Low C_rss ( Typ. 15pF)
100% avalanche tested

Material Composition

Product Change Notification

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Compliance

Package Type

Case Outline

MSL Type

MSL Temp (°C)

Container Type

Container Qty.

V_(BR)DSS Min (V)

R_DS(on) Max @ V_GS = 10 V (mΩ)

Channel Polarity

Configuration

V_GS Max (V)

V_GS(th) Max (V)

I_D Max (A)

P_D Max (W)

R_DS(on) Max @ V_GS = 2.5 V (mΩ)

R_DS(on) Max @ V_GS = 4.5 V (mΩ)

Q_g Typ @ V_GS = 4.5 V (nC)

Q_g Typ @ V_GS = 10 V (nC)

C_iss Typ (pF)

Reference Price

FQU9N25TU

Last Shipments

IPAK-3 / DPAK-3 STRAIGHT LEAD

369AR

TUBE

5040

250

420

N-Channel

Single

±30

7.4

15.5

540

Price N/A

Product Number:

Distributor		Stock	BUY

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MOSFETs | FQU9N25

Power MOSFET, N-Channel, QFET®, 250 V, 7.4 A, 420 mΩ, IPAK

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Power MOSFET, N-Channel, QFET^®, 250 V, 7.4 A, 420 mΩ, IPAK