FQPF3N25

Power MOSFET, N-Channel, QFET^®, 250 V, 2.3 A, 2.2 Ω, TO-220F

Overview

These N-Channel enhancement mode power field effect transistors are produced using ON Semiconductor’s proprietary, planar stripe, DMOS technology. This advanced technology has been especially tailored to minimize on-state resistance, provide superior switching performance, and withstand high energy pulse in the avalanche and commutation mode. These devices are well suited for highefficiency switching DC/DC converters, switch mode power supply.

Applications

High Efficiency Switching DC/DC Converters
Switched Mode Power Supplies

Features

2.3 A, 250 V, R_DS(on) = 2.2 Ω (Max.) @ V_GS = 10 V, I_D = 1.15 A
Low Gate Charge (Typ. 4.0 nC)
Low Crss (Typ. 4.7 pF)
100% Avalanche Tested

Material Composition

Product Change Notification

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CAD Models

Compliance

Package Type

Case Outline

MSL Type

MSL Temp (°C)

Container Type

Container Qty.

V_(BR)DSS Min (V)

R_DS(on) Max @ V_GS = 10 V (mΩ)

Channel Polarity

Configuration

V_GS Max (V)

V_GS(th) Max (V)

I_D Max (A)

P_D Max (W)

R_DS(on) Max @ V_GS = 2.5 V (mΩ)

R_DS(on) Max @ V_GS = 4.5 V (mΩ)

Q_g Typ @ V_GS = 4.5 V (nC)

Q_g Typ @ V_GS = 10 V (nC)

C_iss Typ (pF)

Reference Price

FQPF3N25

Last Shipments

TO-220-3 FullPak

221AT

TUBE

1000

250

2200

N-Channel

Single

2.3

130

Price N/A

Product Number:

Distributor		Stock	BUY

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MOSFETs | FQPF3N25

Power MOSFET, N-Channel, QFET®, 250 V, 2.3 A, 2.2 Ω, TO-220F

Overview

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Power MOSFET, N-Channel, QFET^®, 250 V, 2.3 A, 2.2 Ω, TO-220F