Power MOSFET, N-Channel, QFET®, 200 V, 19 A, 170 mΩ, TO-220F

Overview

This N-Channel enhancement mode power MOSFET is produced using onsemi Semiconductor’s proprietary planar stripe and DMOS technology. This advanced MOSFET technology has been especially tailored to reduce on-state resistance, and to provide superior switching performance and high avalanche energy strength. These devices are suitable for switched mode power supplies, active power factor correction (PFC), and electronic lamp ballasts.

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  • 19A, 200V, RDS(on) = 170mΩ(Max.) @VGS = 10 V, ID = 9.5A
  • Low gate charge ( Typ. 40.5nC)
  • Low Crss ( Typ. 85pF)
  • 100% avalanche tested

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Product

Status

CAD Models

Compliance

Package Type

Case Outline

MSL Type

MSL Temp (°C)

Container Type

Container Qty.

ON Target

Channel Polarity

Silicon Family

Package Name

Type

Gate Level

Wide SOA Mosfets

Configuration

OPN in older Technology

V(BR)DSS Min (V)

RDS(on) Max @ VGS = 10 V (mΩ)

Vgs (V)

Vgs(th) Max (V)

ID Max (A)

PD Max (W)

RDS(on) Max @ VGS = 2.5 V (mΩ)

RDS(on) Max @ VGS = 4.5 V (mΩ)

Qg Typ @ VGS = 4.5 V (nC)

Qg Typ @ VGS = 10 V (nC)

Ciss Typ (pF)

Qgd Typ @ VGS = 4.5 V (nC)

Qrr Typ (nC)

Coss Typ (pF)

Crss Typ (pF)

Reference Price

FQPF19N20C

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Active

CAD Model

Pb

A

H

P

TO-220-3 FullPak

NA

0

TUBE

1000

Y

N-Channel

PowerTrench® T1

TO-220

Low-Medium Voltage

Standard

0

Single

0

200

170

±30

4

19

43

-

-

-

40.5

830

22.5

1630

195

85

$0.6613

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