FQPF19N20C

Power MOSFET, N-Channel, QFET^®, 200 V, 19 A, 170 mΩ, TO-220F

Overview

This N-Channel enhancement mode power MOSFET is produced using ON Semiconductor Semiconductor’s proprietary planar stripe and DMOS technology. This advanced MOSFET technology has been especially tailored to reduce on-state resistance, and to provide superior switching performance and high avalanche energy strength. These devices are suitable for switched mode power supplies, active power factor correction (PFC), and electronic lamp ballasts.

Applications

Other Audio & Video

Features

19A, 200V, R_DS(on) = 170mΩ(Max.) @V_GS = 10 V, I_D = 9.5A
Low gate charge ( Typ. 40.5nC)
Low C_rss ( Typ. 85pF)
100% avalanche tested

Material Composition

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Compliance

Package Type

Case Outline

MSL Type

MSL Temp (°C)

Container Type

Container Qty.

V_(BR)DSS Min (V)

R_DS(on) Max @ V_GS = 10 V (mΩ)

Channel Polarity

Configuration

V_GS Max (V)

V_GS(th) Max (V)

I_D Max (A)

P_D Max (W)

R_DS(on) Max @ V_GS = 2.5 V (mΩ)

R_DS(on) Max @ V_GS = 4.5 V (mΩ)

Q_g Typ @ V_GS = 4.5 V (nC)

Q_g Typ @ V_GS = 10 V (nC)

C_iss Typ (pF)

Reference Price

FQPF19N20C

Active

TO-220-3 FullPak

221AT

TUBE

1000

200

170

N-Channel

Single

±30

40.5

830

$0.6613

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MOSFETs | FQPF19N20C

Power MOSFET, N-Channel, QFET®, 200 V, 19 A, 170 mΩ, TO-220F

Overview

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Power MOSFET, N-Channel, QFET^®, 200 V, 19 A, 170 mΩ, TO-220F