FQP4N20L

Power MOSFET, N-Channel, Logic Level, QFET^®, 200 V, 3.8 A, 1.35 Ω, TO-220

Overview

These N-Channel enhancement mode power field effect transistors are produced using ON Semiconductor’s proprietary, planar stripe, DMOS technology. This advanced technology is especially tailored to minimize on-state resistance, provide superior switching performance, and withstand high energy pulse in the avalanche and commutation modes. These devices are well suited for high efficiency switching DC/DC converters, switch mode power supplies, and motor control.

Features

3.8 A, 200 V, R_DS(on) = 1.35 Ω (Max.) @ V_GS = 10 V, I_D = 1.9 A
Low Gate Charge (Typ. 4.0 nC)
Low Crss (Typ. 6.0 pF)
100% Avalanche Tested

Material Composition

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Compliance

Package Type

Case Outline

MSL Type

MSL Temp (°C)

Container Type

Container Qty.

V_(BR)DSS Min (V)

R_DS(on) Max @ V_GS = 10 V (mΩ)

Channel Polarity

Configuration

V_GS Max (V)

V_GS(th) Max (V)

I_D Max (A)

P_D Max (W)

R_DS(on) Max @ V_GS = 2.5 V (mΩ)

R_DS(on) Max @ V_GS = 4.5 V (mΩ)

Q_g Typ @ V_GS = 4.5 V (nC)

Q_g Typ @ V_GS = 10 V (nC)

C_iss Typ (pF)

Reference Price

FQP4N20L

Last Shipments

TO-220-3

340AT

TUBE

1000

200

1350

N-Channel

Single

3.8

1400

240

Price N/A

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MOSFETs | FQP4N20L

Power MOSFET, N-Channel, Logic Level, QFET®, 200 V, 3.8 A, 1.35 Ω, TO-220

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Power MOSFET, N-Channel, Logic Level, QFET^®, 200 V, 3.8 A, 1.35 Ω, TO-220