Power MOSFET, N-Channel, Logic Level, QFET®, 200 V, 3.8 A, 1.35 Ω, TO-220

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Overview

These N-Channel enhancement mode power field effect transistors are produced using ON Semiconductor’s proprietary, planar stripe, DMOS technology. This advanced technology is especially tailored to minimize on-state resistance, provide superior switching performance, and withstand high energy pulse in the avalanche and commutation modes. These devices are well suited for high efficiency switching DC/DC converters, switch mode power supplies, and motor control.

  • 3.8 A, 200 V, RDS(on) = 1.35 Ω (Max.) @ VGS = 10 V, ID = 1.9 A
  • Low Gate Charge (Typ. 4.0 nC)
  • Low Crss (Typ. 6.0 pF)
  • 100% Avalanche Tested

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Status

CAD Models

Compliance

Package Type

Case Outline

MSL Type

MSL Temp (°C)

Container Type

Container Qty.

ON Target

V(BR)DSS Min (V)

RDS(on) Max @ VGS = 10 V (mΩ)

Channel Polarity

Configuration

VGS Max (V)

VGS(th) Max (V)

ID Max (A)

PD Max (W)

RDS(on) Max @ VGS = 2.5 V (mΩ)

RDS(on) Max @ VGS = 4.5 V (mΩ)

Qg Typ @ VGS = 4.5 V (nC)

Qg Typ @ VGS = 10 V (nC)

Ciss Typ (pF)

Reference Price

FQP4N20L

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Last Shipments

CAD Model

Pb

A

H

P

TO-220-3

NA

0

TUBE

1000

N

200

1350

N-Channel

Single

2

2

3.8

45

-

1400

4

4

240

Price N/A

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